Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization

Vladimir A. Gritsenko; Yuriy N. Novikov; Timofey V. Perevalov; Vladimir N. Kruchinin; Vladimir S. Aliev; Alina K. Gerasimova; Simon B. Erenburg; Svetlana V. Trubina; Kristina O. Kvashnina; Igor P. Prosvirin; Mario Lanza

doi:10.1002/aelm.201700592

Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization

Vladimir A. Gritsenko, Yuriy N. Novikov, Timofey V. Perevalov, Vladimir N. Kruchinin, Vladimir S. Aliev, Alina K. Gerasimova, Simon B. Erenburg, Svetlana V. Trubina, Kristina O. Kvashnina, Igor P. Prosvirin, Mario Lanza

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

X-ray photoelectron spectroscopy, extended X-ray absorption fine structure spectroscopy (EXAFS), X-ray absorption near edge structure (XANES) spectroscopy, spectral ellipsometry, and quantum-chemistry calculations are used to examine the atomic and electronic structure of nonstoichiometric amorphous ZrOx slightly enriched with zirconium. The experimental data show that the ZrOx material consists of stoichiometric ZrO2, metallic Zr, and zirconium suboxides ZrOy. A model of nanoscale spatial potential fluctuations in ZrOx is substantiated. In this model, the potential fluctuations for electrons and holes arise due to the local bandgap energy fluctuations in the range from 0 to 5.4 eV. A ZrOx-based flash memory element with giant retention time is proposed.

Original language	English (US)
Journal	Advanced Electronic Materials
Volume	4
Issue number	9
DOIs	https://doi.org/10.1002/aelm.201700592
State	Published - Sep 1 2018
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2021-03-16

Access to Document

10.1002/aelm.201700592

Cite this

Gritsenko, V. A., Novikov, Y. N., Perevalov, T. V., Kruchinin, V. N., Aliev, V. S., Gerasimova, A. K., Erenburg, S. B., Trubina, S. V., Kvashnina, K. O., Prosvirin, I. P., & Lanza, M. (2018). Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization. Advanced Electronic Materials, 4(9). https://doi.org/10.1002/aelm.201700592

@article{b53b29a1032c4bfabbc0a93fde0c0f78,

title = "Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization",

abstract = "X-ray photoelectron spectroscopy, extended X-ray absorption fine structure spectroscopy (EXAFS), X-ray absorption near edge structure (XANES) spectroscopy, spectral ellipsometry, and quantum-chemistry calculations are used to examine the atomic and electronic structure of nonstoichiometric amorphous ZrOx slightly enriched with zirconium. The experimental data show that the ZrOx material consists of stoichiometric ZrO2, metallic Zr, and zirconium suboxides ZrOy. A model of nanoscale spatial potential fluctuations in ZrOx is substantiated. In this model, the potential fluctuations for electrons and holes arise due to the local bandgap energy fluctuations in the range from 0 to 5.4 eV. A ZrOx-based flash memory element with giant retention time is proposed.",

author = "Gritsenko, {Vladimir A.} and Novikov, {Yuriy N.} and Perevalov, {Timofey V.} and Kruchinin, {Vladimir N.} and Aliev, {Vladimir S.} and Gerasimova, {Alina K.} and Erenburg, {Simon B.} and Trubina, {Svetlana V.} and Kvashnina, {Kristina O.} and Prosvirin, {Igor P.} and Mario Lanza",

note = "Generated from Scopus record by KAUST IRTS on 2021-03-16",

year = "2018",

month = sep,

day = "1",

doi = "10.1002/aelm.201700592",

language = "English (US)",

volume = "4",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley-VCH Verlag",

number = "9",

}

TY - JOUR

T1 - Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization

AU - Gritsenko, Vladimir A.

AU - Novikov, Yuriy N.

AU - Perevalov, Timofey V.

AU - Kruchinin, Vladimir N.

AU - Aliev, Vladimir S.

AU - Gerasimova, Alina K.

AU - Erenburg, Simon B.

AU - Trubina, Svetlana V.

AU - Kvashnina, Kristina O.

AU - Prosvirin, Igor P.

AU - Lanza, Mario

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2018/9/1

Y1 - 2018/9/1

N2 - X-ray photoelectron spectroscopy, extended X-ray absorption fine structure spectroscopy (EXAFS), X-ray absorption near edge structure (XANES) spectroscopy, spectral ellipsometry, and quantum-chemistry calculations are used to examine the atomic and electronic structure of nonstoichiometric amorphous ZrOx slightly enriched with zirconium. The experimental data show that the ZrOx material consists of stoichiometric ZrO2, metallic Zr, and zirconium suboxides ZrOy. A model of nanoscale spatial potential fluctuations in ZrOx is substantiated. In this model, the potential fluctuations for electrons and holes arise due to the local bandgap energy fluctuations in the range from 0 to 5.4 eV. A ZrOx-based flash memory element with giant retention time is proposed.

AB - X-ray photoelectron spectroscopy, extended X-ray absorption fine structure spectroscopy (EXAFS), X-ray absorption near edge structure (XANES) spectroscopy, spectral ellipsometry, and quantum-chemistry calculations are used to examine the atomic and electronic structure of nonstoichiometric amorphous ZrOx slightly enriched with zirconium. The experimental data show that the ZrOx material consists of stoichiometric ZrO2, metallic Zr, and zirconium suboxides ZrOy. A model of nanoscale spatial potential fluctuations in ZrOx is substantiated. In this model, the potential fluctuations for electrons and holes arise due to the local bandgap energy fluctuations in the range from 0 to 5.4 eV. A ZrOx-based flash memory element with giant retention time is proposed.

UR - http://doi.wiley.com/10.1002/aelm.201700592

UR - http://www.scopus.com/inward/record.url?scp=85050810286&partnerID=8YFLogxK

U2 - 10.1002/aelm.201700592

DO - 10.1002/aelm.201700592

M3 - Article

SN - 2199-160X

VL - 4

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 9

ER -

Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this