Nanoscale patterning and electronics on flexible substrate by direct nanoimprinting of metallic nanoparticles

Inkyu Park; Seung H. Ko; Heng Pan; Costas P. Grigoropoulos; Albert P. Pisano; Jean M.J. Fréchet; Eung Sug Lee; Jun Ho Jeong

doi:10.1002/adma.200702326

Nanoscale patterning and electronics on flexible substrate by direct nanoimprinting of metallic nanoparticles

Inkyu Park^*, Seung H. Ko, Heng Pan, Costas P. Grigoropoulos, Albert P. Pisano, Jean M.J. Fréchet, Eung Sug Lee, Jun Ho Jeong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

182 Scopus citations

Abstract

A high-throughput and ultrafine patterning of metallic micro- and nanostructures for electronics in flexible substrates, through a direct nanoimprinting process of metallic nanoparticles, was demonstrated. The imprinting processing temperature was optimized at 80°C to achieve the best filling of the solution into the polydimethylsiloxane (PDMS) stamp. The cross-section of the nanoimprinted microwire is similar to trapezoidal shape but its edge locations are slightly raised and the center portion is flat and lowered. Current-Voltage (I-V) curve along a single gold microwave shows that the imprinted structure behaves as a good ohmic resistor with linear I-V relation. The electrical resistivity of the nanoimprinted and thermally annealed gold microstructures is found to have an average of 1.99 ×10^-7 Ωm with a standard deviation of 5.73 ×10^-8 Ωm.

Original language	English (US)
Pages (from-to)	489-496
Number of pages	8
Journal	Advanced Materials
Volume	20
Issue number	3
DOIs	https://doi.org/10.1002/adma.200702326
State	Published - Feb 4 2008
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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title = "Nanoscale patterning and electronics on flexible substrate by direct nanoimprinting of metallic nanoparticles",

abstract = "A high-throughput and ultrafine patterning of metallic micro- and nanostructures for electronics in flexible substrates, through a direct nanoimprinting process of metallic nanoparticles, was demonstrated. The imprinting processing temperature was optimized at 80°C to achieve the best filling of the solution into the polydimethylsiloxane (PDMS) stamp. The cross-section of the nanoimprinted microwire is similar to trapezoidal shape but its edge locations are slightly raised and the center portion is flat and lowered. Current-Voltage (I-V) curve along a single gold microwave shows that the imprinted structure behaves as a good ohmic resistor with linear I-V relation. The electrical resistivity of the nanoimprinted and thermally annealed gold microstructures is found to have an average of 1.99 ×10-7 Ωm with a standard deviation of 5.73 ×10-8 Ωm.",

author = "Inkyu Park and Ko, {Seung H.} and Heng Pan and Grigoropoulos, {Costas P.} and Pisano, {Albert P.} and Fr{\'e}chet, {Jean M.J.} and Lee, {Eung Sug} and Jeong, {Jun Ho}",

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T1 - Nanoscale patterning and electronics on flexible substrate by direct nanoimprinting of metallic nanoparticles

AU - Park, Inkyu

AU - Ko, Seung H.

AU - Pan, Heng

AU - Grigoropoulos, Costas P.

AU - Pisano, Albert P.

AU - Fréchet, Jean M.J.

AU - Lee, Eung Sug

AU - Jeong, Jun Ho

PY - 2008/2/4

Y1 - 2008/2/4

N2 - A high-throughput and ultrafine patterning of metallic micro- and nanostructures for electronics in flexible substrates, through a direct nanoimprinting process of metallic nanoparticles, was demonstrated. The imprinting processing temperature was optimized at 80°C to achieve the best filling of the solution into the polydimethylsiloxane (PDMS) stamp. The cross-section of the nanoimprinted microwire is similar to trapezoidal shape but its edge locations are slightly raised and the center portion is flat and lowered. Current-Voltage (I-V) curve along a single gold microwave shows that the imprinted structure behaves as a good ohmic resistor with linear I-V relation. The electrical resistivity of the nanoimprinted and thermally annealed gold microstructures is found to have an average of 1.99 ×10-7 Ωm with a standard deviation of 5.73 ×10-8 Ωm.

AB - A high-throughput and ultrafine patterning of metallic micro- and nanostructures for electronics in flexible substrates, through a direct nanoimprinting process of metallic nanoparticles, was demonstrated. The imprinting processing temperature was optimized at 80°C to achieve the best filling of the solution into the polydimethylsiloxane (PDMS) stamp. The cross-section of the nanoimprinted microwire is similar to trapezoidal shape but its edge locations are slightly raised and the center portion is flat and lowered. Current-Voltage (I-V) curve along a single gold microwave shows that the imprinted structure behaves as a good ohmic resistor with linear I-V relation. The electrical resistivity of the nanoimprinted and thermally annealed gold microstructures is found to have an average of 1.99 ×10-7 Ωm with a standard deviation of 5.73 ×10-8 Ωm.

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Nanoscale patterning and electronics on flexible substrate by direct nanoimprinting of metallic nanoparticles

Abstract

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