A high-throughput and ultrafine patterning of metallic micro- and nanostructures for electronics in flexible substrates, through a direct nanoimprinting process of metallic nanoparticles, was demonstrated. The imprinting processing temperature was optimized at 80°C to achieve the best filling of the solution into the polydimethylsiloxane (PDMS) stamp. The cross-section of the nanoimprinted microwire is similar to trapezoidal shape but its edge locations are slightly raised and the center portion is flat and lowered. Current-Voltage (I-V) curve along a single gold microwave shows that the imprinted structure behaves as a good ohmic resistor with linear I-V relation. The electrical resistivity of the nanoimprinted and thermally annealed gold microstructures is found to have an average of 1.99 ×10-7 Ωm with a standard deviation of 5.73 ×10-8 Ωm.
|Original language||English (US)|
|Number of pages||8|
|State||Published - Feb 4 2008|
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering