TY - GEN
T1 - Nanoscale morphology of graphene on different substrates
AU - Lanza, M.
AU - Wang, Y.
AU - Duan, H.
AU - Porti, M.
AU - Nafria, M.
AU - Bayerl, A.
AU - Aymerich, X.
AU - Gao, T.
AU - Liu, Z.
AU - Zhang, Y.
AU - Liang, H.
AU - Jing, G.
N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16
PY - 2013/4/8
Y1 - 2013/4/8
N2 - Graphene layers can be used as the conductive channel in metal oxide semiconductor field effect transistors, metallic electrodes in capacitors, etc. However, when graphene is grown by chemical vapor deposition (CVD), substrate-induced corrugations and strain-related wrinkles formed on the graphene layer impoverish the properties of these devices by lowering the conductance and increasing their variability. In this work, different nanoscale experimental techniques have been used to investigate the morphology of as-grown and transferred graphene sheets on different substrates. We show that while the compressive strain (from the growth process) in the graphene sheet on flat substrates is minimized by generating wrinkles, on rough substrates it can be minimized by improving the graphene-substrate adhesion, leading to lower densities of wrinkles. This method allows the design of wrinkle-free graphene based devices. © 2013 IEEE.
AB - Graphene layers can be used as the conductive channel in metal oxide semiconductor field effect transistors, metallic electrodes in capacitors, etc. However, when graphene is grown by chemical vapor deposition (CVD), substrate-induced corrugations and strain-related wrinkles formed on the graphene layer impoverish the properties of these devices by lowering the conductance and increasing their variability. In this work, different nanoscale experimental techniques have been used to investigate the morphology of as-grown and transferred graphene sheets on different substrates. We show that while the compressive strain (from the growth process) in the graphene sheet on flat substrates is minimized by generating wrinkles, on rough substrates it can be minimized by improving the graphene-substrate adhesion, leading to lower densities of wrinkles. This method allows the design of wrinkle-free graphene based devices. © 2013 IEEE.
UR - http://ieeexplore.ieee.org/document/6481394/
UR - http://www.scopus.com/inward/record.url?scp=84875745421&partnerID=8YFLogxK
U2 - 10.1109/CDE.2013.6481394
DO - 10.1109/CDE.2013.6481394
M3 - Conference contribution
SN - 9781467346689
SP - 269
EP - 272
BT - Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
ER -