Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

A. Fontserè; A. Pérez-Tomás; M. Placidi; J. Llobet; N. Baron; S. Chenot; Y. Cordier; J. C. Moreno; M. R. Jennings; P. M. Gammon; C. A. Fisher; V. Iglesias; M. Porti; A. Bayerl; M. Lanza; M. Nafría

doi:10.1088/0957-4484/23/39/395204

Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

A. Fontserè, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, M. R. Jennings, P. M. Gammon, C. A. Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, M. Nafría

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we have used the technique known as conductive AFM (CAFM) to perform electrical characterization at the nanoscale. The AlGaN/GaN HEMT ohmic (drain and source) and Schottky (gate) contacts were investigated by the CAFM technique. The estimated area of these highly conductive pillars (each of them of approximately 20-50nm radius) represents around 5% of the total contact area. Analogously, the reverse leakage of the gate Schottky contact at the nanoscale seems to correlate somehow with the topography of the narrow AlGaN barrier regions producing larger currents. © 2012 IOP Publishing Ltd.

Original language	English (US)
Journal	Nanotechnology
Volume	23
Issue number	39
DOIs	https://doi.org/10.1088/0957-4484/23/39/395204
State	Published - Oct 5 2012
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2021-03-16

ASJC Scopus subject areas

Bioengineering
Mechanics of Materials
General Materials Science
General Chemistry
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1088/0957-4484/23/39/395204

Cite this

Fontserè, A., Pérez-Tomás, A., Placidi, M., Llobet, J., Baron, N., Chenot, S., Cordier, Y., Moreno, J. C., Jennings, M. R., Gammon, P. M., Fisher, C. A., Iglesias, V., Porti, M., Bayerl, A., Lanza, M., & Nafría, M. (2012). Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors. Nanotechnology, 23(39). https://doi.org/10.1088/0957-4484/23/39/395204

@article{5f0f900e1c3348408bae7d8288d8fa37,

title = "Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors",

abstract = "AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we have used the technique known as conductive AFM (CAFM) to perform electrical characterization at the nanoscale. The AlGaN/GaN HEMT ohmic (drain and source) and Schottky (gate) contacts were investigated by the CAFM technique. The estimated area of these highly conductive pillars (each of them of approximately 20-50nm radius) represents around 5% of the total contact area. Analogously, the reverse leakage of the gate Schottky contact at the nanoscale seems to correlate somehow with the topography of the narrow AlGaN barrier regions producing larger currents. {\textcopyright} 2012 IOP Publishing Ltd.",

author = "A. Fontser{\`e} and A. P{\'e}rez-Tom{\'a}s and M. Placidi and J. Llobet and N. Baron and S. Chenot and Y. Cordier and Moreno, {J. C.} and Jennings, {M. R.} and Gammon, {P. M.} and Fisher, {C. A.} and V. Iglesias and M. Porti and A. Bayerl and M. Lanza and M. Nafr{\'i}a",

note = "Generated from Scopus record by KAUST IRTS on 2021-03-16",

year = "2012",

month = oct,

day = "5",

doi = "10.1088/0957-4484/23/39/395204",

language = "English (US)",

volume = "23",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "39",

}

TY - JOUR

T1 - Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

AU - Fontserè, A.

AU - Pérez-Tomás, A.

AU - Placidi, M.

AU - Llobet, J.

AU - Baron, N.

AU - Chenot, S.

AU - Cordier, Y.

AU - Moreno, J. C.

AU - Jennings, M. R.

AU - Gammon, P. M.

AU - Fisher, C. A.

AU - Iglesias, V.

AU - Porti, M.

AU - Bayerl, A.

AU - Lanza, M.

AU - Nafría, M.

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2012/10/5

Y1 - 2012/10/5

N2 - AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we have used the technique known as conductive AFM (CAFM) to perform electrical characterization at the nanoscale. The AlGaN/GaN HEMT ohmic (drain and source) and Schottky (gate) contacts were investigated by the CAFM technique. The estimated area of these highly conductive pillars (each of them of approximately 20-50nm radius) represents around 5% of the total contact area. Analogously, the reverse leakage of the gate Schottky contact at the nanoscale seems to correlate somehow with the topography of the narrow AlGaN barrier regions producing larger currents. © 2012 IOP Publishing Ltd.

AB - AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we have used the technique known as conductive AFM (CAFM) to perform electrical characterization at the nanoscale. The AlGaN/GaN HEMT ohmic (drain and source) and Schottky (gate) contacts were investigated by the CAFM technique. The estimated area of these highly conductive pillars (each of them of approximately 20-50nm radius) represents around 5% of the total contact area. Analogously, the reverse leakage of the gate Schottky contact at the nanoscale seems to correlate somehow with the topography of the narrow AlGaN barrier regions producing larger currents. © 2012 IOP Publishing Ltd.

UR - https://iopscience.iop.org/article/10.1088/0957-4484/23/39/395204

UR - http://www.scopus.com/inward/record.url?scp=84866342520&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/23/39/395204

DO - 10.1088/0957-4484/23/39/395204

M3 - Article

SN - 0957-4484

VL - 23

JO - Nanotechnology

JF - Nanotechnology

IS - 39

ER -

Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this