Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

Albin Bayerl; Mario Lanza; Lidia Aguilera; Marc Porti; Montserrat Nafría; Xavier Aymerich; Stefan De Gendt

doi:10.1016/j.microrel.2013.02.005

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

One of the main factors influencing the electrical properties of Atomic Layer Deposited (ALD) high-k materials is the precursor used during the growing process, which must provide good thermal stability to withstand the high temperatures used during the manufacturing process. In this work, the electrical properties of ALD-grown HfO2 ultra-thin films using different precursors were investigated at both, the nanoscale (using the Conductive Atomic Force Microscope, CAFM) and at the device level, which can give complementary information about the quality of the high-k layer. The effect of an annealing process above 1000 °C (before or after the gate electrode deposition) was also considered. © 2013 Elsevier Ltd. All rights reserved.

Original language	English (US)
Pages (from-to)	867-871
Number of pages	5
Journal	Microelectronics Reliability
Volume	53
Issue number	6
DOIs	https://doi.org/10.1016/j.microrel.2013.02.005
State	Published - Mar 25 2013
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2021-03-16

ASJC Scopus subject areas

Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Condensed Matter Physics

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10.1016/j.microrel.2013.02.005

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title = "Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors",

abstract = "One of the main factors influencing the electrical properties of Atomic Layer Deposited (ALD) high-k materials is the precursor used during the growing process, which must provide good thermal stability to withstand the high temperatures used during the manufacturing process. In this work, the electrical properties of ALD-grown HfO2 ultra-thin films using different precursors were investigated at both, the nanoscale (using the Conductive Atomic Force Microscope, CAFM) and at the device level, which can give complementary information about the quality of the high-k layer. The effect of an annealing process above 1000 °C (before or after the gate electrode deposition) was also considered. {\textcopyright} 2013 Elsevier Ltd. All rights reserved.",

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AU - Bayerl, Albin

AU - Lanza, Mario

AU - Aguilera, Lidia

AU - Porti, Marc

AU - Nafría, Montserrat

AU - Aymerich, Xavier

AU - Gendt, Stefan De

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2013/3/25

Y1 - 2013/3/25

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AB - One of the main factors influencing the electrical properties of Atomic Layer Deposited (ALD) high-k materials is the precursor used during the growing process, which must provide good thermal stability to withstand the high temperatures used during the manufacturing process. In this work, the electrical properties of ALD-grown HfO2 ultra-thin films using different precursors were investigated at both, the nanoscale (using the Conductive Atomic Force Microscope, CAFM) and at the device level, which can give complementary information about the quality of the high-k layer. The effect of an annealing process above 1000 °C (before or after the gate electrode deposition) was also considered. © 2013 Elsevier Ltd. All rights reserved.

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M3 - Article

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JF - Microelectronics Reliability

IS - 6

ER -

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

Abstract

Bibliographical note

ASJC Scopus subject areas

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