TY - GEN
T1 - Nanoscale and device level analysis of the resistive switching phenomenon in ultra-thin high-k gate dielectrics
AU - Crespo-Yepes, A.
AU - Martin-Martinez, J.
AU - Iglesias, V.
AU - Rodriguez, R.
AU - Porti, M.
AU - Nafria, M.
AU - Aymerich, X.
AU - Lanza, M.
N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16
PY - 2013/4/8
Y1 - 2013/4/8
N2 - Some high-k dielectric materials show two interchangeable conductivity states (a High Resistive State, HRS, and Low Resistive State, LRS) in what is known as Resistive Switching (RS), being the basis of ReRAMs. In this work, the Resistive Switching (RS) phenomenon is studied on ultrathin Hf based high-k dielectrics at the nanoscale, by using the conductive atomic force microscopy (CAFM), and at device level. The CAFM allows analysing the local dielectric properties of the RS phenomenon. At device level, the temperature dependence of the RS-related gate currents during the HRS and LRS has been studied in MOSFETs. © 2013 IEEE.
AB - Some high-k dielectric materials show two interchangeable conductivity states (a High Resistive State, HRS, and Low Resistive State, LRS) in what is known as Resistive Switching (RS), being the basis of ReRAMs. In this work, the Resistive Switching (RS) phenomenon is studied on ultrathin Hf based high-k dielectrics at the nanoscale, by using the conductive atomic force microscopy (CAFM), and at device level. The CAFM allows analysing the local dielectric properties of the RS phenomenon. At device level, the temperature dependence of the RS-related gate currents during the HRS and LRS has been studied in MOSFETs. © 2013 IEEE.
UR - https://ieeexplore.ieee.org/document/6481397/
UR - http://www.scopus.com/inward/record.url?scp=84875726171&partnerID=8YFLogxK
U2 - 10.1109/CDE.2013.6481397
DO - 10.1109/CDE.2013.6481397
M3 - Conference contribution
SN - 9781467346689
SP - 281
EP - 284
BT - Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
ER -