Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism

Marie Kryask; Markos Trikeriotis; Christine Ouyang; Sovik Chakrabarty; Emmanuel P. Giannelis; Christopher K. Ober

doi:10.2494/photopolymer.26.659

Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism

Marie Kryask, Markos Trikeriotis, Christine Ouyang, Sovik Chakrabarty, Emmanuel P. Giannelis, Christopher K. Ober

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

Hybrid nanoparticle photoresists and their patterning using DUV, EUV, 193 nm lithography and e-beam lithography has been investigated and reported earlier. The nanoparticles have demonstrated very high EUV sensitivity and significant etch resistance compared to other standard photoresists. The current study aims at investigating and establishing the underlying mechanism for dual tone patterning of these nanoparticle photoresist systems. Infrared spectroscopy and UV absorbance studies supported by mass loss and dissolution studies support the current model. © 2013SPST.

Original language	English (US)
Pages (from-to)	659-664
Number of pages	6
Journal	Journal of Photopolymer Science and Technology
Volume	26
Issue number	5
DOIs	https://doi.org/10.2494/photopolymer.26.659
State	Published - 2013
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors gratefully acknowledge International SEMATECH for funding, as well as the Cornell Nanoscale Science and Technology Facility (CNF), Cornell Center of Materials Research (CCMR), the Nanobiotechnology Center (NBTC) and the KAUST-Cornell Center of Energy and Sustainability (KAUST-CU) for use of their facilities.Lawrence Berkeley National Laboratories was essential in our studies of EUV exposure.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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title = "Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism",

abstract = "Hybrid nanoparticle photoresists and their patterning using DUV, EUV, 193 nm lithography and e-beam lithography has been investigated and reported earlier. The nanoparticles have demonstrated very high EUV sensitivity and significant etch resistance compared to other standard photoresists. The current study aims at investigating and establishing the underlying mechanism for dual tone patterning of these nanoparticle photoresist systems. Infrared spectroscopy and UV absorbance studies supported by mass loss and dissolution studies support the current model. {\textcopyright} 2013SPST.",

author = "Marie Kryask and Markos Trikeriotis and Christine Ouyang and Sovik Chakrabarty and Giannelis, {Emmanuel P.} and Ober, {Christopher K.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors gratefully acknowledge International SEMATECH for funding, as well as the Cornell Nanoscale Science and Technology Facility (CNF), Cornell Center of Materials Research (CCMR), the Nanobiotechnology Center (NBTC) and the KAUST-Cornell Center of Energy and Sustainability (KAUST-CU) for use of their facilities.Lawrence Berkeley National Laboratories was essential in our studies of EUV exposure. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2013",

doi = "10.2494/photopolymer.26.659",

language = "English (US)",

volume = "26",

pages = "659--664",

journal = "Journal of Photopolymer Science and Technology",

issn = "0914-9244",

publisher = "Tokai University",

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AU - Kryask, Marie

AU - Trikeriotis, Markos

AU - Ouyang, Christine

AU - Chakrabarty, Sovik

AU - Giannelis, Emmanuel P.

AU - Ober, Christopher K.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors gratefully acknowledge International SEMATECH for funding, as well as the Cornell Nanoscale Science and Technology Facility (CNF), Cornell Center of Materials Research (CCMR), the Nanobiotechnology Center (NBTC) and the KAUST-Cornell Center of Energy and Sustainability (KAUST-CU) for use of their facilities.Lawrence Berkeley National Laboratories was essential in our studies of EUV exposure. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2013

Y1 - 2013

N2 - Hybrid nanoparticle photoresists and their patterning using DUV, EUV, 193 nm lithography and e-beam lithography has been investigated and reported earlier. The nanoparticles have demonstrated very high EUV sensitivity and significant etch resistance compared to other standard photoresists. The current study aims at investigating and establishing the underlying mechanism for dual tone patterning of these nanoparticle photoresist systems. Infrared spectroscopy and UV absorbance studies supported by mass loss and dissolution studies support the current model. © 2013SPST.

AB - Hybrid nanoparticle photoresists and their patterning using DUV, EUV, 193 nm lithography and e-beam lithography has been investigated and reported earlier. The nanoparticles have demonstrated very high EUV sensitivity and significant etch resistance compared to other standard photoresists. The current study aims at investigating and establishing the underlying mechanism for dual tone patterning of these nanoparticle photoresist systems. Infrared spectroscopy and UV absorbance studies supported by mass loss and dissolution studies support the current model. © 2013SPST.

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JF - Journal of Photopolymer Science and Technology

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ER -

Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism

Abstract

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