Nanometer scale spintronic sensors and memories

Yuankai Zheng; Kebin Li; Guchang Han; Jinjun Qiu; Zaibing Guo; Yihong Wu

Nanometer scale spintronic sensors and memories

Yuankai Zheng, Kebin Li, Guchang Han, Jinjun Qiu, Zaibing Guo, Yihong Wu

Research output: Contribution to conference › Paper › peer-review

Abstract

Nanometer scale spintronics for data storage applications in both hard disk drive and non-volatile memory are introduced. For the hard disk drive applications, we have developed all-metal GMR sensors with an MR of 18%. A reader with a track width of 109nm is also fabricated. Linear and noise-free output signal has been achieved. For non-volatile memory applications, an MTJ MRAM with switch-free, two-line structure and a peripheral circuitry is presented. The shunting effect has been effectively reduced in this structure; the signal is maintained at original level even without the requirement of a transistor or a diode. The additional digital line to write the cell is removed without affecting the writing performance.

Original language	English (US)
Pages	752-755
Number of pages	4
State	Published - 2004
Externally published	Yes
Event	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: Oct 18 2004 → Oct 21 2004

Other

Other	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Country/Territory	China
City	Beijing
Period	10/18/04 → 10/21/04

ASJC Scopus subject areas

General Engineering

Cite this

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title = "Nanometer scale spintronic sensors and memories",

abstract = "Nanometer scale spintronics for data storage applications in both hard disk drive and non-volatile memory are introduced. For the hard disk drive applications, we have developed all-metal GMR sensors with an MR of 18%. A reader with a track width of 109nm is also fabricated. Linear and noise-free output signal has been achieved. For non-volatile memory applications, an MTJ MRAM with switch-free, two-line structure and a peripheral circuitry is presented. The shunting effect has been effectively reduced in this structure; the signal is maintained at original level even without the requirement of a transistor or a diode. The additional digital line to write the cell is removed without affecting the writing performance.",

author = "Yuankai Zheng and Kebin Li and Guchang Han and Jinjun Qiu and Zaibing Guo and Yihong Wu",

year = "2004",

language = "English (US)",

pages = "752--755",

note = "2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",

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TY - CONF

T1 - Nanometer scale spintronic sensors and memories

AU - Zheng, Yuankai

AU - Li, Kebin

AU - Han, Guchang

AU - Qiu, Jinjun

AU - Guo, Zaibing

AU - Wu, Yihong

PY - 2004

Y1 - 2004

N2 - Nanometer scale spintronics for data storage applications in both hard disk drive and non-volatile memory are introduced. For the hard disk drive applications, we have developed all-metal GMR sensors with an MR of 18%. A reader with a track width of 109nm is also fabricated. Linear and noise-free output signal has been achieved. For non-volatile memory applications, an MTJ MRAM with switch-free, two-line structure and a peripheral circuitry is presented. The shunting effect has been effectively reduced in this structure; the signal is maintained at original level even without the requirement of a transistor or a diode. The additional digital line to write the cell is removed without affecting the writing performance.

AB - Nanometer scale spintronics for data storage applications in both hard disk drive and non-volatile memory are introduced. For the hard disk drive applications, we have developed all-metal GMR sensors with an MR of 18%. A reader with a track width of 109nm is also fabricated. Linear and noise-free output signal has been achieved. For non-volatile memory applications, an MTJ MRAM with switch-free, two-line structure and a peripheral circuitry is presented. The shunting effect has been effectively reduced in this structure; the signal is maintained at original level even without the requirement of a transistor or a diode. The additional digital line to write the cell is removed without affecting the writing performance.

UR - http://www.scopus.com/inward/record.url?scp=21644478718&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:21644478718

SP - 752

EP - 755

T2 - 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004

Y2 - 18 October 2004 through 21 October 2004

ER -

Nanometer scale spintronic sensors and memories

Abstract

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ASJC Scopus subject areas

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