Nanolithography performances of ultraviolet III chemically amplified positive resist

L. Grella; M. Gentili; E. Di Fabrizio; M. Baciocchi; L. Mastrogiacomo; R. Maggiora; L. Scopa

doi:10.1116/1.589691

Nanolithography performances of ultraviolet III chemically amplified positive resist

L. Grella^*, M. Gentili, E. Di Fabrizio, M. Baciocchi, L. Mastrogiacomo, R. Maggiora, L. Scopa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Devices for future microelectronics shall demand lithographic performance that fall within the nanometer region (100 nm and below). Chemically amplified resists (CARs) offer a substantial gain in speed compared to conventional ones, and thus are attractive for the ultradense layouts of such future devices. However, before they can be selected for advanced microelectronics device production, nanolithography performances have to be proven. Ultraviolet (UV) III is a novel CAR from Shipley Corp. which was reported to possess fine-line lithographic capabilities. In this work, the UV III resist is characterized for the e-beam exposure. A commercial e-beam lithography machine was employed as exposure tool at 50 kV accelerating voltage. A process description for resolution below 100 nm is given, and resist performance was proven on layouts meaningful of actual devices.

Original language	English (US)
Pages (from-to)	2596-2600
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	6
DOIs	https://doi.org/10.1116/1.589691
State	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Nanolithography performances of ultraviolet III chemically amplified positive resist",

abstract = "Devices for future microelectronics shall demand lithographic performance that fall within the nanometer region (100 nm and below). Chemically amplified resists (CARs) offer a substantial gain in speed compared to conventional ones, and thus are attractive for the ultradense layouts of such future devices. However, before they can be selected for advanced microelectronics device production, nanolithography performances have to be proven. Ultraviolet (UV) III is a novel CAR from Shipley Corp. which was reported to possess fine-line lithographic capabilities. In this work, the UV III resist is characterized for the e-beam exposure. A commercial e-beam lithography machine was employed as exposure tool at 50 kV accelerating voltage. A process description for resolution below 100 nm is given, and resist performance was proven on layouts meaningful of actual devices.",

author = "L. Grella and M. Gentili and {Di Fabrizio}, E. and M. Baciocchi and L. Mastrogiacomo and R. Maggiora and L. Scopa",

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language = "English (US)",

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pages = "2596--2600",

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T1 - Nanolithography performances of ultraviolet III chemically amplified positive resist

AU - Grella, L.

AU - Gentili, M.

AU - Di Fabrizio, E.

AU - Baciocchi, M.

AU - Mastrogiacomo, L.

AU - Maggiora, R.

AU - Scopa, L.

PY - 1997

Y1 - 1997

N2 - Devices for future microelectronics shall demand lithographic performance that fall within the nanometer region (100 nm and below). Chemically amplified resists (CARs) offer a substantial gain in speed compared to conventional ones, and thus are attractive for the ultradense layouts of such future devices. However, before they can be selected for advanced microelectronics device production, nanolithography performances have to be proven. Ultraviolet (UV) III is a novel CAR from Shipley Corp. which was reported to possess fine-line lithographic capabilities. In this work, the UV III resist is characterized for the e-beam exposure. A commercial e-beam lithography machine was employed as exposure tool at 50 kV accelerating voltage. A process description for resolution below 100 nm is given, and resist performance was proven on layouts meaningful of actual devices.

AB - Devices for future microelectronics shall demand lithographic performance that fall within the nanometer region (100 nm and below). Chemically amplified resists (CARs) offer a substantial gain in speed compared to conventional ones, and thus are attractive for the ultradense layouts of such future devices. However, before they can be selected for advanced microelectronics device production, nanolithography performances have to be proven. Ultraviolet (UV) III is a novel CAR from Shipley Corp. which was reported to possess fine-line lithographic capabilities. In this work, the UV III resist is characterized for the e-beam exposure. A commercial e-beam lithography machine was employed as exposure tool at 50 kV accelerating voltage. A process description for resolution below 100 nm is given, and resist performance was proven on layouts meaningful of actual devices.

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Nanolithography performances of ultraviolet III chemically amplified positive resist

Abstract

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