Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires

Hock Chun Chin*, Xiao Gong, Tien Khee Ng, Wan Khai Loke, Choun Pei Wong, Zexiang Shen, Satrio Wicaksono, Soon Fatt Yoon, Yee Chia Yeo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Heterogeneous integration of high-quality GaAs on Si-based substrates using a selective migration-enhanced epitaxy (MEE) of GaAs on strain-compliant SiGe nanowires was demonstrated for the first time. The physics of compliance in nanoscale heterostructures was captured and studied using finite-element simulation. It is shown that nanostructures can provide additional substrate compliance for strain relief and therefore contribute to the formation of defect-free GaAs on SiGe. Extensive characterization using scanning electron microscopy and cross-sectional transmission electron microscopy was performed to illustrate the successful growth of GaAs on SiGe nanowire. Raman and Auger electron spectroscopy measurements further confirmed the quality of the GaAs grown and the high growth selectivity of the MEE process.

Original languageEnglish (US)
Article number024312
JournalJournal of Applied Physics
Issue number2
StatePublished - Jul 15 2010

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires'. Together they form a unique fingerprint.

Cite this