Nano-magnetic tunnel junctions controlled by electric field for straintronics

Peisen Li, Xinping Yao, Yueguo Hu, Mengchun Pan, Minhui Ji, Aitian Chen, Junping Peng, Weicheng Qiu, Jiafei Hu, Qi Zhang, Hong-Guang Piao, Sen Zhang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The magnetic tunneling junction (MTJ) controlled by electric field as an alternate approach for energy efficiency is the highlight for nonvolatile RAM, while there is still a lack of research on resistance manipulation with the electric field in nanoscale MTJs. In this study, we integrated nanoscale MTJs on the (011) orientated Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) ferroelectric substrates and systematically investigated the magnetoresistance as a function of the magnetic field and electric field. A single domain state of the nanoscale MTJ was demonstrated by the experimental result and theoretical simulation. Afterward, the obvious electric field control of R–H curves was obtained and explained by the competition between magnetoelastic energy and shape anisotropy. More importantly, simulation results also predicted that the switching pathway of magnetic moments under the magnetic field is strongly dependent on the applied electric field, displaying the electric field control of chiral switching in the nano-MTJ. Our work is a milestone in the realization of the emerging dubbed straintronics field.
Original languageEnglish (US)
StatePublished - Aug 2 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-08-30
Acknowledgements: This work was supported by the National Natural Science Foundation of China (Grant No. 11604384, 61671460, 51507178 and 12074429).


Dive into the research topics of 'Nano-magnetic tunnel junctions controlled by electric field for straintronics'. Together they form a unique fingerprint.

Cite this