Abstract
Zinc-oxide (ZnO) and zirconia (ZrO2) metal oxides have been studied extensively in the past few decades with several potential applications including memory devices. In this work, a scalability study, based on the ITRS roadmap, is conducted on memory devices with ZnO and ZrO2 nano-islands charge trapping layer. Both nano-islands are deposited using atomic layer deposition (ALD), however, the different sizes, distribution and properties of the materials result in different memory performance. The results show that at the 32-nm node charge trapping memory with 127 ZrO2 nano-islands can provide a 9.4 V memory window. However, with ZnO only 31 nano-islands can provide a window of 2.5 V. The results indicate that ZrO2 nano-islands are more promising than ZnO in scaled down devices due to their higher density, higher-k, and absence of quantum confinement effects.
Original language | English (US) |
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Pages (from-to) | 1143-1146 |
Number of pages | 4 |
Journal | IEEE Transactions on Nanotechnology |
Volume | 16 |
Issue number | 6 |
DOIs | |
State | Published - Oct 19 2017 |
Externally published | Yes |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledgements: We gratefully acknowledge financial support for this work provided by the Masdar Institute of Science and Technology, Office of Naval Research Global grant N62909-16-1-2031. Nazek El-Atab acknowledges L’Oréal-UNESCO 2017 For Women in Science International Rising Talents Award.