N-type silicon solar cells featuring an electron-selective TiO2 contact

Xinbo Yang; Klaus Weber

doi:10.1109/PVSC.2015.7356139

N-type silicon solar cells featuring an electron-selective TiO2 contact

Xinbo Yang, Klaus Weber

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

13 Scopus citations

Abstract

In this work, the implementation of an electron-selective TiO2 contact into n-type silicon solar cells is presented for the first time. The surface passivation performance of atomic layer deposition (ALD) ultrathin TiO2 on n-type silicon is investigated. Ultrathin TiO2 film is shown to afford good passivation to non-diffused n-type silicon surface. N-type silicon solar cell with an efficiency of up to 19.8% has been achieved with the implementation of an electron-selective TiO2 contact at the rear. The cell efficiency is demonstrated to be mainly limited by the degraded passivation quality of TiO2 film during contact formation annealing at a high temperature. The results show the potential to fabricate high efficiency silicon solar cells with a simple implementation of electron-selective TiO2 contact.

Original language	English (US)
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7356139
State	Published - Dec 14 2015
Externally published	Yes
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015

Publication series

Name	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Other

Other	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	06/14/15 → 06/19/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

heterojunction
silicon
solar cells
titanium oxide

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2015.7356139

Cite this

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title = "N-type silicon solar cells featuring an electron-selective TiO2 contact",

abstract = "In this work, the implementation of an electron-selective TiO2 contact into n-type silicon solar cells is presented for the first time. The surface passivation performance of atomic layer deposition (ALD) ultrathin TiO2 on n-type silicon is investigated. Ultrathin TiO2 film is shown to afford good passivation to non-diffused n-type silicon surface. N-type silicon solar cell with an efficiency of up to 19.8% has been achieved with the implementation of an electron-selective TiO2 contact at the rear. The cell efficiency is demonstrated to be mainly limited by the degraded passivation quality of TiO2 film during contact formation annealing at a high temperature. The results show the potential to fabricate high efficiency silicon solar cells with a simple implementation of electron-selective TiO2 contact.",

keywords = "heterojunction, silicon, solar cells, titanium oxide",

author = "Xinbo Yang and Klaus Weber",

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year = "2015",

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doi = "10.1109/PVSC.2015.7356139",

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Yang, X & Weber, K 2015, N-type silicon solar cells featuring an electron-selective TiO2 contact. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356139, 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 06/14/15. https://doi.org/10.1109/PVSC.2015.7356139

N-type silicon solar cells featuring an electron-selective TiO2 contact. / Yang, Xinbo; Weber, Klaus.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7356139 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yang, Xinbo

AU - Weber, Klaus

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N2 - In this work, the implementation of an electron-selective TiO2 contact into n-type silicon solar cells is presented for the first time. The surface passivation performance of atomic layer deposition (ALD) ultrathin TiO2 on n-type silicon is investigated. Ultrathin TiO2 film is shown to afford good passivation to non-diffused n-type silicon surface. N-type silicon solar cell with an efficiency of up to 19.8% has been achieved with the implementation of an electron-selective TiO2 contact at the rear. The cell efficiency is demonstrated to be mainly limited by the degraded passivation quality of TiO2 film during contact formation annealing at a high temperature. The results show the potential to fabricate high efficiency silicon solar cells with a simple implementation of electron-selective TiO2 contact.

AB - In this work, the implementation of an electron-selective TiO2 contact into n-type silicon solar cells is presented for the first time. The surface passivation performance of atomic layer deposition (ALD) ultrathin TiO2 on n-type silicon is investigated. Ultrathin TiO2 film is shown to afford good passivation to non-diffused n-type silicon surface. N-type silicon solar cell with an efficiency of up to 19.8% has been achieved with the implementation of an electron-selective TiO2 contact at the rear. The cell efficiency is demonstrated to be mainly limited by the degraded passivation quality of TiO2 film during contact formation annealing at a high temperature. The results show the potential to fabricate high efficiency silicon solar cells with a simple implementation of electron-selective TiO2 contact.

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BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

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ER -

N-type silicon solar cells featuring an electron-selective TiO2 contact

Abstract

Publication series

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Bibliographical note

Keywords

ASJC Scopus subject areas

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