Abstract
N-type PbS colloidal-quantum-dot (CQD) films are fabricated using a controlled halide chemical treatment, applied in an inert processing ambient environment. The new materials exhibit a mobility of 0.1 cm2 V -1 s-1. The halogen ions serve both as a passivating agent and n-dope the films via substitution at surface chalcogen sites. The majority electron concentration across the range 1016 to 1018 cm-3 is varied systematically. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 6181-6185 |
| Number of pages | 5 |
| Journal | Advanced Materials |
| Volume | 24 |
| Issue number | 46 |
| DOIs | |
| State | Published - Sep 12 2012 |
| Externally published | Yes |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): KUS-11-009-21
Acknowledgements: We thank Angstrom Engineering and Innovative Technology for useful discussions regarding material-deposition methods and control of the glovebox environment, respectively. The authors would like to acknowledge the technical assistance and scientific guidance of E. Palmiano, R. Wolowiec, and D. Kopilovic. This publication is based, in part, on work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. D.Z. acknowledges financial support through the NSERC CGS D Scholarship.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.