N -type behavior of ferroelectric-gate carbon nanotube network transistor

Jun Wei Cheah; Yumeng Shi; Hock Guan Ong; Chun Wei Lee; Lain Jong Li; Junling Wang

doi:10.1063/1.2975158

N -type behavior of ferroelectric-gate carbon nanotube network transistor

Jun Wei Cheah, Yumeng Shi, Hock Guan Ong, Chun Wei Lee, Lain Jong Li, Junling Wang

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spontaneous polarization of ferroelectric materials offers nonvolatility and controllability of the surface charges. Modulation of > 102 in the channel conductivity has been observed in the network-based transistor. Voltage pulses are used to control the transistor states; no continuous gate bias is needed. Furthermore, n -type behavior of the network channel is observed, which is attributed to a change in the Schottky barrier at the carbon nanotube-metal interface.

Original language	English (US)
Article number	082103
Journal	Applied Physics Letters
Volume	93
Issue number	8
DOIs	https://doi.org/10.1063/1.2975158
State	Published - 2008
Externally published	Yes

Bibliographical note

Funding Information:
We acknowledge the support from Nanyang Technological University and Ministry of Education of Singapore under Project Nos. AcRF RG30/06 and RG32/06.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2975158

Cite this

@article{a0eb1d5c69224192bea35c3ae9213865,

title = "N -type behavior of ferroelectric-gate carbon nanotube network transistor",

abstract = "Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spontaneous polarization of ferroelectric materials offers nonvolatility and controllability of the surface charges. Modulation of > 102 in the channel conductivity has been observed in the network-based transistor. Voltage pulses are used to control the transistor states; no continuous gate bias is needed. Furthermore, n -type behavior of the network channel is observed, which is attributed to a change in the Schottky barrier at the carbon nanotube-metal interface.",

author = "Cheah, {Jun Wei} and Yumeng Shi and Ong, {Hock Guan} and Lee, {Chun Wei} and Li, {Lain Jong} and Junling Wang",

note = "Funding Information: We acknowledge the support from Nanyang Technological University and Ministry of Education of Singapore under Project Nos. AcRF RG30/06 and RG32/06.",

year = "2008",

doi = "10.1063/1.2975158",

language = "English (US)",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "8",

}

TY - JOUR

T1 - N -type behavior of ferroelectric-gate carbon nanotube network transistor

AU - Cheah, Jun Wei

AU - Shi, Yumeng

AU - Ong, Hock Guan

AU - Lee, Chun Wei

AU - Li, Lain Jong

AU - Wang, Junling

N1 - Funding Information: We acknowledge the support from Nanyang Technological University and Ministry of Education of Singapore under Project Nos. AcRF RG30/06 and RG32/06.

PY - 2008

Y1 - 2008

N2 - Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spontaneous polarization of ferroelectric materials offers nonvolatility and controllability of the surface charges. Modulation of > 102 in the channel conductivity has been observed in the network-based transistor. Voltage pulses are used to control the transistor states; no continuous gate bias is needed. Furthermore, n -type behavior of the network channel is observed, which is attributed to a change in the Schottky barrier at the carbon nanotube-metal interface.

AB - Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spontaneous polarization of ferroelectric materials offers nonvolatility and controllability of the surface charges. Modulation of > 102 in the channel conductivity has been observed in the network-based transistor. Voltage pulses are used to control the transistor states; no continuous gate bias is needed. Furthermore, n -type behavior of the network channel is observed, which is attributed to a change in the Schottky barrier at the carbon nanotube-metal interface.

UR - http://www.scopus.com/inward/record.url?scp=51349139859&partnerID=8YFLogxK

U2 - 10.1063/1.2975158

DO - 10.1063/1.2975158

M3 - Article

AN - SCOPUS:51349139859

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082103

ER -

N -type behavior of ferroelectric-gate carbon nanotube network transistor

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this