MXene-Contacted Silicon Solar Cells with 11.5% Efficiency

Hui-Chun Fu, Vinoth Ramalingam, Hyunho Kim, Chun-Ho Lin, Xiaosheng Fang, Husam N. Alshareef, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

188 Scopus citations

Abstract

MXene, a new class of 2D materials, has gained significant attention owing to its attractive electrical conductivity, tunable work function, and metallic nature for wide range of applications. Herein, delaminated few layered Ti3C2Tx MXene contacted Si solar cells with a maximum power conversion efficiency (PCE) of ≈11.5% under AM1.5G illumination are demonstrated. The formation of an Ohmic junction of the metallic MXene to n+-Si surface efficiently extracts the photogenerated electrons from n+np+-Si, decreases the contact resistance, and suppresses the charge carrier recombination, giving rise to excellent open-circuit voltage and short-circuit current density. The rapid thermal annealing process further improves the electrical contact between Ti3C2Tx MXene and n+-Si surface by reducing sheet resistance, increasing electrical conductivity, and decreasing cell series resistance, thus leading to a remarkable improvement in fill factor and overall PCE. The work demonstrated here can be extended to other MXene compositions as potential electrodes for developing highly performing solar cells.
Original languageEnglish (US)
Pages (from-to)1900180
JournalAdvanced Energy Materials
Volume9
Issue number22
DOIs
StatePublished - Apr 24 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: H.C.F. and V.R. contributed equally to this work. Research reported in this publication was funded by King Abdullah University of Science and Technology (KAUST) Baseline Funds, KAUST Sensor Initiative, KAUST Solar Center, and KAUST Catalysis Center. X.S.F. acknowledges the support from the Science and Technology Commission of Shanghai Municipality (18520744600, 18520710800, and 17520742400).

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