Multiple-wavelength selective channel electroabsorption intensity modulators have been fabricated on a single InGaAs/InGaAsP chip using a one-step quantum well intermixing process. This technique was demonstrated for tailoring the intensity modulator operating wavelength by incorporating low-energy (360 keV) phosphorus ions implantation induced disordering process with gray-mask lithography technology. A modulation depth of -15 dB has been measured from these devices with a voltage swing of -4.5 V.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Sep 9 2002|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)