Multiple-wavelength operation of electroabsorption intensity modulator array fabricated using the one-step quantum well intermixing process

S. L. Ng; H. S. Lim; Y. L. Lam; Y. C. Chan; B. S. Ooi; V. Aimez; J. Beauvais; J. Beerens

doi:10.1063/1.1508159

Multiple-wavelength operation of electroabsorption intensity modulator array fabricated using the one-step quantum well intermixing process

S. L. Ng, H. S. Lim, Y. L. Lam, Y. C. Chan, B. S. Ooi, V. Aimez, J. Beauvais, J. Beerens

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Multiple-wavelength selective channel electroabsorption intensity modulators have been fabricated on a single InGaAs/InGaAsP chip using a one-step quantum well intermixing process. This technique was demonstrated for tailoring the intensity modulator operating wavelength by incorporating low-energy (360 keV) phosphorus ions implantation induced disordering process with gray-mask lithography technology. A modulation depth of -15 dB has been measured from these devices with a voltage swing of -4.5 V.

Original language	English (US)
Pages (from-to)	1958-1960
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	11
DOIs	https://doi.org/10.1063/1.1508159
State	Published - Sep 9 2002
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1508159

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title = "Multiple-wavelength operation of electroabsorption intensity modulator array fabricated using the one-step quantum well intermixing process",

abstract = "Multiple-wavelength selective channel electroabsorption intensity modulators have been fabricated on a single InGaAs/InGaAsP chip using a one-step quantum well intermixing process. This technique was demonstrated for tailoring the intensity modulator operating wavelength by incorporating low-energy (360 keV) phosphorus ions implantation induced disordering process with gray-mask lithography technology. A modulation depth of -15 dB has been measured from these devices with a voltage swing of -4.5 V.",

author = "Ng, {S. L.} and Lim, {H. S.} and Lam, {Y. L.} and Chan, {Y. C.} and Ooi, {B. S.} and V. Aimez and J. Beauvais and J. Beerens",

year = "2002",

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AU - Ng, S. L.

AU - Lim, H. S.

AU - Lam, Y. L.

AU - Chan, Y. C.

AU - Ooi, B. S.

AU - Aimez, V.

AU - Beauvais, J.

AU - Beerens, J.

PY - 2002/9/9

Y1 - 2002/9/9

N2 - Multiple-wavelength selective channel electroabsorption intensity modulators have been fabricated on a single InGaAs/InGaAsP chip using a one-step quantum well intermixing process. This technique was demonstrated for tailoring the intensity modulator operating wavelength by incorporating low-energy (360 keV) phosphorus ions implantation induced disordering process with gray-mask lithography technology. A modulation depth of -15 dB has been measured from these devices with a voltage swing of -4.5 V.

AB - Multiple-wavelength selective channel electroabsorption intensity modulators have been fabricated on a single InGaAs/InGaAsP chip using a one-step quantum well intermixing process. This technique was demonstrated for tailoring the intensity modulator operating wavelength by incorporating low-energy (360 keV) phosphorus ions implantation induced disordering process with gray-mask lithography technology. A modulation depth of -15 dB has been measured from these devices with a voltage swing of -4.5 V.

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U2 - 10.1063/1.1508159

DO - 10.1063/1.1508159

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Multiple-wavelength operation of electroabsorption intensity modulator array fabricated using the one-step quantum well intermixing process

Abstract

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