TY - GEN
T1 - Multiple quantum wells GaInNAs for ridge-wave-guide laser diodes
AU - Abdul Manaf, Nor Azlian
AU - Alias, Mohd Sharizal
AU - Mitani, Sufian Mousa
AU - Yahya, Mohamed Razman
PY - 2010
Y1 - 2010
N2 - The high demand for long wavelength lasers has led to the investigation of GaInNAs material. GaInNAs multiple-quantum-wells (MQWs) with different QW numbers have been studied for ridge waveguide (RWG) lasers. The emission wavelengths of the lasers are in the range of 1310 nm. Significant improvements of emission wavelength and output power were demonstrated with increasing QW numbers. We believed that that the number of QWs used in the devices is limited by the crystalline quality of the GaInNAs material. The emission wavelength is much more improved by increment of QW numbers. A smaller QW numbers are suitable for lower threshold current and higher differential quantum efficiency while a larger QW numbers can achieve a less output power. The higher threshold current is due to the approximately saturated threshold current density and the increments of the active volume. Further comparisons on the devices performance with variation of QW numbers will be report.
AB - The high demand for long wavelength lasers has led to the investigation of GaInNAs material. GaInNAs multiple-quantum-wells (MQWs) with different QW numbers have been studied for ridge waveguide (RWG) lasers. The emission wavelengths of the lasers are in the range of 1310 nm. Significant improvements of emission wavelength and output power were demonstrated with increasing QW numbers. We believed that that the number of QWs used in the devices is limited by the crystalline quality of the GaInNAs material. The emission wavelength is much more improved by increment of QW numbers. A smaller QW numbers are suitable for lower threshold current and higher differential quantum efficiency while a larger QW numbers can achieve a less output power. The higher threshold current is due to the approximately saturated threshold current density and the increments of the active volume. Further comparisons on the devices performance with variation of QW numbers will be report.
UR - http://www.scopus.com/inward/record.url?scp=79955772864&partnerID=8YFLogxK
U2 - 10.1109/IEMT.2010.5746766
DO - 10.1109/IEMT.2010.5746766
M3 - Conference contribution
AN - SCOPUS:79955772864
SN - 9781424488278
T3 - Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium
BT - Proceedings of the 34th International Electronics Manufacturing Technology Conference, IEMT 2010
T2 - 34th International Electronics Manufacturing Technology Conference, IEMT 2010
Y2 - 30 November 2010 through 2 December 2010
ER -