Multiple-channel InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low-energy-phosphorus-ion-implantation-induced intermixing

Seng Lee Ng*, Hwi Siong Lim, Boon Ooi, Yee Loy Lam, Yan Zhou, Yuen Chuen Chan, Vincent Aimez, Jacques Beauvais, Jean Beerens

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


A new quantum-well intermixing process in InGaAs-InGaAsP structures, based on controlled low energy phosphorus (P) ion implantation, has been employed in the fabrication of multiple wavelength selective channel electroabsorption (EA) intensity modulators. These modulators, fabricated on a single chip, have an intensity modulation depth as high as -1 1 dB for voltage swings as low as -6 V.

Original languageEnglish (US)
Pages (from-to)490-494
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Dec 1 2004
EventApplications of Photonic Technology 4 - Quebec City, QC, Canada
Duration: Jun 12 2000Jun 12 2000


  • Electro-absorption
  • Ion implantation
  • Phosphorus
  • Quantum well intermixing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this