Abstract
A new quantum-well intermixing process in InGaAs-InGaAsP structures, based on controlled low energy phosphorus (P) ion implantation, has been employed in the fabrication of multiple wavelength selective channel electroabsorption (EA) intensity modulators. These modulators, fabricated on a single chip, have an intensity modulation depth as high as -1 1 dB for voltage swings as low as -6 V.
Original language | English (US) |
---|---|
Pages (from-to) | 490-494 |
Number of pages | 5 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4087 |
DOIs | |
State | Published - 2004 |
Externally published | Yes |
Event | Applications of Photonic Technology 4 - Quebec City, QC, Canada Duration: Jun 12 2000 → Jun 12 2000 |
Keywords
- Electro-absorption
- Ion implantation
- Phosphorus
- Quantum well intermixing
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering