Multiple-channel InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low-energy-phosphorus-ion-implantation-induced intermixing

Seng Lee Ng; Hwi Siong Lim; Boon Siew Ooi; Yee Loy Lam; Yan Zhou; Yuen Chuen Chan; Vincent Aimez; Jacques Beauvais; Jean Beerens

doi:10.1117/12.406442

Multiple-channel InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low-energy-phosphorus-ion-implantation-induced intermixing

Seng Lee Ng^*, Hwi Siong Lim, Boon Siew Ooi, Yee Loy Lam, Yan Zhou, Yuen Chuen Chan, Vincent Aimez, Jacques Beauvais, Jean Beerens

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

A new quantum-well intermixing process in InGaAs-InGaAsP structures, based on controlled low energy phosphorus (P) ion implantation, has been employed in the fabrication of multiple wavelength selective channel electroabsorption (EA) intensity modulators. These modulators, fabricated on a single chip, have an intensity modulation depth as high as -1 1 dB for voltage swings as low as -6 V.

Original language	English (US)
Pages (from-to)	490-494
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4087
DOIs	https://doi.org/10.1117/12.406442
State	Published - 2004
Externally published	Yes
Event	Applications of Photonic Technology 4 - Quebec City, QC, Canada Duration: Jun 12 2000 → Jun 12 2000

Keywords

Electro-absorption
Ion implantation
Phosphorus
Quantum well intermixing

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.406442

Cite this

Ng, S. L., Lim, H. S., Ooi, B. S., Lam, Y. L., Zhou, Y., Chan, Y. C., Aimez, V., Beauvais, J., & Beerens, J. (2004). Multiple-channel InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low-energy-phosphorus-ion-implantation-induced intermixing. Proceedings of SPIE - The International Society for Optical Engineering, 4087, 490-494. https://doi.org/10.1117/12.406442

@article{73fc9907ddb04a11bb1898ba7c2bdd29,

title = "Multiple-channel InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low-energy-phosphorus-ion-implantation-induced intermixing",

abstract = "A new quantum-well intermixing process in InGaAs-InGaAsP structures, based on controlled low energy phosphorus (P) ion implantation, has been employed in the fabrication of multiple wavelength selective channel electroabsorption (EA) intensity modulators. These modulators, fabricated on a single chip, have an intensity modulation depth as high as -1 1 dB for voltage swings as low as -6 V.",

keywords = "Electro-absorption, Ion implantation, Phosphorus, Quantum well intermixing",

author = "Ng, {Seng Lee} and Lim, {Hwi Siong} and Ooi, {Boon Siew} and Lam, {Yee Loy} and Yan Zhou and Chan, {Yuen Chuen} and Vincent Aimez and Jacques Beauvais and Jean Beerens",

year = "2004",

doi = "10.1117/12.406442",

language = "English (US)",

volume = "4087",

pages = "490--494",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Applications of Photonic Technology 4 ; Conference date: 12-06-2000 Through 12-06-2000",

}

Ng, SL, Lim, HS, Ooi, BS, Lam, YL, Zhou, Y, Chan, YC, Aimez, V, Beauvais, J & Beerens, J 2004, 'Multiple-channel InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low-energy-phosphorus-ion-implantation-induced intermixing', Proceedings of SPIE - The International Society for Optical Engineering, vol. 4087, pp. 490-494. https://doi.org/10.1117/12.406442

Multiple-channel InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low-energy-phosphorus-ion-implantation-induced intermixing. / Ng, Seng Lee; Lim, Hwi Siong; Ooi, Boon Siew et al.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4087, 2004, p. 490-494.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Multiple-channel InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low-energy-phosphorus-ion-implantation-induced intermixing

AU - Ng, Seng Lee

AU - Lim, Hwi Siong

AU - Ooi, Boon Siew

AU - Lam, Yee Loy

AU - Zhou, Yan

AU - Chan, Yuen Chuen

AU - Aimez, Vincent

AU - Beauvais, Jacques

AU - Beerens, Jean

PY - 2004

Y1 - 2004

N2 - A new quantum-well intermixing process in InGaAs-InGaAsP structures, based on controlled low energy phosphorus (P) ion implantation, has been employed in the fabrication of multiple wavelength selective channel electroabsorption (EA) intensity modulators. These modulators, fabricated on a single chip, have an intensity modulation depth as high as -1 1 dB for voltage swings as low as -6 V.

AB - A new quantum-well intermixing process in InGaAs-InGaAsP structures, based on controlled low energy phosphorus (P) ion implantation, has been employed in the fabrication of multiple wavelength selective channel electroabsorption (EA) intensity modulators. These modulators, fabricated on a single chip, have an intensity modulation depth as high as -1 1 dB for voltage swings as low as -6 V.

KW - Electro-absorption

KW - Ion implantation

KW - Phosphorus

KW - Quantum well intermixing

UR - http://www.scopus.com/inward/record.url?scp=84875449044&partnerID=8YFLogxK

U2 - 10.1117/12.406442

DO - 10.1117/12.406442

M3 - Conference article

AN - SCOPUS:84875449044

SN - 0277-786X

VL - 4087

SP - 490

EP - 494

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Applications of Photonic Technology 4

Y2 - 12 June 2000 through 12 June 2000

ER -

Multiple-channel InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low-energy-phosphorus-ion-implantation-induced intermixing

Abstract

Keywords

ASJC Scopus subject areas

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