Multilevel magnetoresistive random access memory written at curie point

Y. K. Zheng; Y. H. Wu; J. J. Qiu; Z. B. Guo; G. C. Han; K. B. Li; Z. Q. Lu; H. Xie; P. Luo

doi:10.1109/INTMAG.2002.1000778

Multilevel magnetoresistive random access memory written at curie point

Y. K. Zheng, Y. H. Wu, J. J. Qiu, Z. B. Guo, G. C. Han, K. B. Li, Z. Q. Lu, H. Xie, P. Luo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The storage density of MRAMs can be increased via either reducing the cell size or increasing the number of bits stored in one cell. A three-level and six-state multilevel MRAM has been proposed. However, it is difficult to write a cell independently in an MRAM array using this structure. Here we propose a multilevel MRAM that writes data at the Curie point and reads data using the angular-dependent magnetoresistance. The former has been proposed by Beech et al. (2000) for a spin-valve based single level MRAM. In our structure, a pinned ferromagnetic layer (CoFe/IrMn) is used as the recording layer in a MTJ device.

Original language	English (US)
Title of host publication	INTERMAG Europe 2002 - IEEE International Magnetics Conference
Editors	J. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, Jo De Boeck, R. Wood
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	0780373650, 9780780373655
DOIs	https://doi.org/10.1109/INTMAG.2002.1000778
State	Published - 2002
Externally published	Yes
Event	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands Duration: Apr 28 2002 → May 2 2002

Publication series

Name	INTERMAG Europe 2002 - IEEE International Magnetics Conference

Other

Other	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
Country/Territory	Netherlands
City	Amsterdam
Period	04/28/02 → 05/2/02

Bibliographical note

Publisher Copyright:
©2002 IEEE.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Surfaces, Coatings and Films

Access to Document

10.1109/INTMAG.2002.1000778

Cite this

Zheng, Y. K., Wu, Y. H., Qiu, J. J., Guo, Z. B., Han, G. C., Li, K. B., Lu, Z. Q., Xie, H., & Luo, P. (2002). Multilevel magnetoresistive random access memory written at curie point. In J. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, J. De Boeck, & R. Wood (Eds.), INTERMAG Europe 2002 - IEEE International Magnetics Conference Article 1000778 (INTERMAG Europe 2002 - IEEE International Magnetics Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2002.1000778

Zheng, Y. K. ; Wu, Y. H. ; Qiu, J. J. et al. / Multilevel magnetoresistive random access memory written at curie point. INTERMAG Europe 2002 - IEEE International Magnetics Conference. editor / J. Fidler ; B. Hillebrands ; C. Ross ; D. Weller ; L. Folks ; E. Hill ; M. Vazquez Villalabeitia ; J. A. Bain ; Jo De Boeck ; R. Wood. Institute of Electrical and Electronics Engineers Inc., 2002. (INTERMAG Europe 2002 - IEEE International Magnetics Conference).

@inproceedings{e44c304371f94c83a9130d3cb4a8cfbc,

title = "Multilevel magnetoresistive random access memory written at curie point",

abstract = "The storage density of MRAMs can be increased via either reducing the cell size or increasing the number of bits stored in one cell. A three-level and six-state multilevel MRAM has been proposed. However, it is difficult to write a cell independently in an MRAM array using this structure. Here we propose a multilevel MRAM that writes data at the Curie point and reads data using the angular-dependent magnetoresistance. The former has been proposed by Beech et al. (2000) for a spin-valve based single level MRAM. In our structure, a pinned ferromagnetic layer (CoFe/IrMn) is used as the recording layer in a MTJ device.",

author = "Zheng, {Y. K.} and Wu, {Y. H.} and Qiu, {J. J.} and Guo, {Z. B.} and Han, {G. C.} and Li, {K. B.} and Lu, {Z. Q.} and H. Xie and P. Luo",

note = "Publisher Copyright: {\textcopyright}2002 IEEE.; 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 ; Conference date: 28-04-2002 Through 02-05-2002",

year = "2002",

doi = "10.1109/INTMAG.2002.1000778",

language = "English (US)",

series = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "J. Fidler and B. Hillebrands and C. Ross and D. Weller and L. Folks and E. Hill and {Vazquez Villalabeitia}, M. and Bain, {J. A.} and {De Boeck}, Jo and R. Wood",

booktitle = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",

address = "United States",

}

Zheng, YK, Wu, YH, Qiu, JJ, Guo, ZB, Han, GC, Li, KB, Lu, ZQ, Xie, H & Luo, P 2002, Multilevel magnetoresistive random access memory written at curie point. in J Fidler, B Hillebrands, C Ross, D Weller, L Folks, E Hill, M Vazquez Villalabeitia, JA Bain, J De Boeck & R Wood (eds), INTERMAG Europe 2002 - IEEE International Magnetics Conference., 1000778, INTERMAG Europe 2002 - IEEE International Magnetics Conference, Institute of Electrical and Electronics Engineers Inc., 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002, Amsterdam, Netherlands, 04/28/02. https://doi.org/10.1109/INTMAG.2002.1000778

Multilevel magnetoresistive random access memory written at curie point. / Zheng, Y. K.; Wu, Y. H.; Qiu, J. J. et al.
INTERMAG Europe 2002 - IEEE International Magnetics Conference. ed. / J. Fidler; B. Hillebrands; C. Ross; D. Weller; L. Folks; E. Hill; M. Vazquez Villalabeitia; J. A. Bain; Jo De Boeck; R. Wood. Institute of Electrical and Electronics Engineers Inc., 2002. 1000778 (INTERMAG Europe 2002 - IEEE International Magnetics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Zheng, Y. K.

AU - Wu, Y. H.

AU - Qiu, J. J.

AU - Guo, Z. B.

AU - Han, G. C.

AU - Li, K. B.

AU - Lu, Z. Q.

AU - Xie, H.

AU - Luo, P.

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AB - The storage density of MRAMs can be increased via either reducing the cell size or increasing the number of bits stored in one cell. A three-level and six-state multilevel MRAM has been proposed. However, it is difficult to write a cell independently in an MRAM array using this structure. Here we propose a multilevel MRAM that writes data at the Curie point and reads data using the angular-dependent magnetoresistance. The former has been proposed by Beech et al. (2000) for a spin-valve based single level MRAM. In our structure, a pinned ferromagnetic layer (CoFe/IrMn) is used as the recording layer in a MTJ device.

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M3 - Conference contribution

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T3 - INTERMAG Europe 2002 - IEEE International Magnetics Conference

BT - INTERMAG Europe 2002 - IEEE International Magnetics Conference

A2 - Fidler, J.

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PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Zheng YK, Wu YH, Qiu JJ, Guo ZB, Han GC, Li KB et al. Multilevel magnetoresistive random access memory written at curie point. In Fidler J, Hillebrands B, Ross C, Weller D, Folks L, Hill E, Vazquez Villalabeitia M, Bain JA, De Boeck J, Wood R, editors, INTERMAG Europe 2002 - IEEE International Magnetics Conference. Institute of Electrical and Electronics Engineers Inc. 2002. 1000778. (INTERMAG Europe 2002 - IEEE International Magnetics Conference). doi: 10.1109/INTMAG.2002.1000778

Multilevel magnetoresistive random access memory written at curie point

Abstract

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Bibliographical note

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