A multilevel magnetoresistive random access memory (MRAM) was proposed that writes data at Curie point and reads data using the angular-dependent magnetoresistance. A hard magnetic layer or pinned ferromagnetic layer was used as the recording layer. The free layer was served as the read layer and the magnetization was set to the initial state.
|Original language||English (US)|
|Journal||Digests of the Intermag Conference|
|State||Published - Dec 1 2002|
|Event||2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands|
Duration: Apr 28 2002 → May 2 2002
ASJC Scopus subject areas
- Electrical and Electronic Engineering