Multilevel magnetoresistive random access memory written at curie point

Yuankai K. Zheng; Y. H. Wu; Jinjun J. Qiu; Z. B. Guo; G. C. Han; K. B. Li; Z. Q. Lu; H. Xie; P. Luo

Multilevel magnetoresistive random access memory written at curie point

Yuankai K. Zheng^*, Y. H. Wu, Jinjun J. Qiu, Z. B. Guo, G. C. Han, K. B. Li, Z. Q. Lu, H. Xie, P. Luo

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

A multilevel magnetoresistive random access memory (MRAM) was proposed that writes data at Curie point and reads data using the angular-dependent magnetoresistance. A hard magnetic layer or pinned ferromagnetic layer was used as the recording layer. The free layer was served as the read layer and the magnetization was set to the initial state.

Original language	English (US)
Pages (from-to)	BB02
Journal	Digests of the Intermag Conference
State	Published - 2002
Externally published	Yes
Event	2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands Duration: Apr 28 2002 → May 2 2002

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@article{9cf067b643534767aea9760236232506,

title = "Multilevel magnetoresistive random access memory written at curie point",

abstract = "A multilevel magnetoresistive random access memory (MRAM) was proposed that writes data at Curie point and reads data using the angular-dependent magnetoresistance. A hard magnetic layer or pinned ferromagnetic layer was used as the recording layer. The free layer was served as the read layer and the magnetization was set to the initial state.",

author = "Zheng, {Yuankai K.} and Wu, {Y. H.} and Qiu, {Jinjun J.} and Guo, {Z. B.} and Han, {G. C.} and Li, {K. B.} and Lu, {Z. Q.} and H. Xie and P. Luo",

year = "2002",

language = "English (US)",

pages = "BB02",

journal = "Digests of the Intermag Conference",

issn = "0074-6843",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG ; Conference date: 28-04-2002 Through 02-05-2002",

}

TY - JOUR

T1 - Multilevel magnetoresistive random access memory written at curie point

AU - Zheng, Yuankai K.

AU - Wu, Y. H.

AU - Qiu, Jinjun J.

AU - Guo, Z. B.

AU - Han, G. C.

AU - Li, K. B.

AU - Lu, Z. Q.

AU - Xie, H.

AU - Luo, P.

PY - 2002

Y1 - 2002

N2 - A multilevel magnetoresistive random access memory (MRAM) was proposed that writes data at Curie point and reads data using the angular-dependent magnetoresistance. A hard magnetic layer or pinned ferromagnetic layer was used as the recording layer. The free layer was served as the read layer and the magnetization was set to the initial state.

AB - A multilevel magnetoresistive random access memory (MRAM) was proposed that writes data at Curie point and reads data using the angular-dependent magnetoresistance. A hard magnetic layer or pinned ferromagnetic layer was used as the recording layer. The free layer was served as the read layer and the magnetization was set to the initial state.

UR - http://www.scopus.com/inward/record.url?scp=0036908044&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036908044

SN - 0074-6843

SP - BB02

JO - Digests of the Intermag Conference

JF - Digests of the Intermag Conference

T2 - 2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG

Y2 - 28 April 2002 through 2 May 2002

ER -

Multilevel magnetoresistive random access memory written at curie point

Abstract

ASJC Scopus subject areas

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