We report the properties of a field effect transistor (FET) and a gas sensor based on CuO nanowires. CuO nanowire FETs exhibit p-type behavior. Large-scale p-type CuO nanowire thin-film transistors (104 devices in a 25mm2 area) are fabricated and we effectively demonstrate their enhanced performance. Furthermore, CuO nanowire exhibits high and fast response to CO gas at 200 °C, which makes it a promising candidate for a poisonous gas sensing nanodevice.
|Original language||English (US)|
|State||Published - Apr 28 2009|
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering