Abstract
We report the properties of a field effect transistor (FET) and a gas sensor based on CuO nanowires. CuO nanowire FETs exhibit p-type behavior. Large-scale p-type CuO nanowire thin-film transistors (104 devices in a 25mm2 area) are fabricated and we effectively demonstrate their enhanced performance. Furthermore, CuO nanowire exhibits high and fast response to CO gas at 200 °C, which makes it a promising candidate for a poisonous gas sensing nanodevice.
Original language | English (US) |
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Article number | 085203 |
Journal | Nanotechnology |
Volume | 20 |
Issue number | 8 |
DOIs | |
State | Published - 2009 |
Externally published | Yes |
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering