Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy

Shaik Wasef, Selma Amara, Meshal Alawein, Hossein Fariborzi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


In this work, we report the fabrication and characterization of novel four and six terminal current-driven magnetic memory cells. In particular, we experimentally demonstrate the magnetization switching of triangular and square magnets through spin-orbit torque by in-plane currents in a Pt/NiFe (Py) heterostructure. The spin torques, generated by applying a constant current in one of multiple Pt wires, are used to switch a Py film between its multiple stable magnetic states, as quantified by anisotropic magnetoresistance (AMR) and tunnel magnetoresistance (TMR) measurements at room temperature. The observations have also been confirmed by micromagnetic simulations.
Original languageEnglish (US)
Title of host publication2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages3
ISBN (Print)9781538637128
StatePublished - Sep 7 2018

Cite this