In this work, we investigate solution processable MoS2 based MOS (metal oxide semiconductor) capacitor device for data storage and in-memory light sensing. The MOS capacitor exhibits a good memory window of about 2.5 V with the operating voltage of +6/-6 V and good endurance of 1000 cycles without any degradation. The device shows a good memory window from 0.4 V to 5 V when the operating voltage was varied from 4/-4 to 8/-8. Importantly, the memory window of the device was increased from 2.5 V to more than 5 V when optical light with different wavelengths was induced onto the device. These promising features of the device make it suitable for data storage and in-memory light sensing.
|Original language||English (US)|
|Number of pages||4|
|State||Published - May 19 2023|
Bibliographical noteKAUST Repository Item: Exported on 2023-05-24
Acknowledgements: This work was supported by the King Abdullah University of Science and Technology (KAUST) Baseline Fund, Saudi Arabia.
ASJC Scopus subject areas