Abstract
In this work, we investigate solution processable MoS2 based MOS (metal oxide semiconductor) capacitor device for data storage and in-memory light sensing. The MOS capacitor exhibits a good memory window of about 2.5 V with the operating voltage of +6/-6 V and good endurance of 1000 cycles without any degradation. The device shows a good memory window from 0.4 V to 5 V when the operating voltage was varied from 4/-4 to 8/-8. Importantly, the memory window of the device was increased from 2.5 V to more than 5 V when optical light with different wavelengths was induced onto the device. These promising features of the device make it suitable for data storage and in-memory light sensing.
Original language | English (US) |
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Pages (from-to) | 187-190 |
Number of pages | 4 |
Journal | ECS Transactions |
Volume | 111 |
Issue number | 1 |
DOIs | |
State | Published - May 19 2023 |
Bibliographical note
KAUST Repository Item: Exported on 2023-05-24Acknowledgements: This work was supported by the King Abdullah University of Science and Technology (KAUST) Baseline Fund, Saudi Arabia.
ASJC Scopus subject areas
- General Engineering