MOS memory with ultrathin Al2O3-TiO2 nanolaminates tunnel oxide and 2.85-nm Si-nanoparticles charge trapping layer

Nazek El-Atab; Ammar Nayfeh; Berk Berkan Turgut; Ali K. Okyay

doi:10.1109/NANO.2015.7388692

MOS memory with ultrathin Al2O3-TiO₂ nanolaminates tunnel oxide and 2.85-nm Si-nanoparticles charge trapping layer

Nazek El-Atab, Ammar Nayfeh, Berk Berkan Turgut, Ali K. Okyay

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

In this work, a MOS memory with 4.56-nm ultrathin Al2O3-TiO₂ nanolaminates thin film deposited by Atomic Layer Deposition (ALD) followed by 1-nm HfO2 tunnel oxide deposited by Plasma-Assisted ALD is studied. The charge trapping layer consists of 2.85-nm Si-nanoparticles (Si-NPs). A memory effect is observed using high frequency C-V measurements. The shift of the threshold voltage (Vt) obtained from the hysteresis measurements at 10/-10 V program/erase voltage is around 5 V and a 3 V Vt shift is obtained at low operating voltage of 6/-6 V. In addition, the calculated retention characteristic of the charges in the Si-NPs memory (>10 years) makes such memory structure promising for applications in non-volatile memory devices.

Original language	English (US)
Title of host publication	IEEE-NANO 2015 - 15th International Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	663-665
Number of pages	3
ISBN (Electronic)	9781467381550
DOIs	https://doi.org/10.1109/NANO.2015.7388692
State	Published - 2015
Event	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: Jul 27 2015 → Jul 30 2015

Publication series

Name	IEEE-NANO 2015 - 15th International Conference on Nanotechnology

Conference

Conference	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Country/Territory	Italy
City	Rome
Period	07/27/15 → 07/30/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

Al2O3-TiO nanolaminates
atomic layer deposition
Charge trapping memory
HfO2
MOS
retention time

ASJC Scopus subject areas

Process Chemistry and Technology
Electrical and Electronic Engineering
Ceramics and Composites
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

Access to Document

10.1109/NANO.2015.7388692

Cite this

El-Atab, N., Nayfeh, A., Turgut, B. B., & Okyay, A. K. (2015). MOS memory with ultrathin Al2O3-TiO₂ nanolaminates tunnel oxide and 2.85-nm Si-nanoparticles charge trapping layer. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 663-665). Article 7388692 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388692

El-Atab, Nazek ; Nayfeh, Ammar ; Turgut, Berk Berkan et al. / MOS memory with ultrathin Al2O3-TiO₂ nanolaminates tunnel oxide and 2.85-nm Si-nanoparticles charge trapping layer. IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 663-665 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

@inproceedings{9762aebbbd914015b6a4dcd38c476c6a,

title = "MOS memory with ultrathin Al2O3-TiO2 nanolaminates tunnel oxide and 2.85-nm Si-nanoparticles charge trapping layer",

abstract = "In this work, a MOS memory with 4.56-nm ultrathin Al2O3-TiO2 nanolaminates thin film deposited by Atomic Layer Deposition (ALD) followed by 1-nm HfO2 tunnel oxide deposited by Plasma-Assisted ALD is studied. The charge trapping layer consists of 2.85-nm Si-nanoparticles (Si-NPs). A memory effect is observed using high frequency C-V measurements. The shift of the threshold voltage (Vt) obtained from the hysteresis measurements at 10/-10 V program/erase voltage is around 5 V and a 3 V Vt shift is obtained at low operating voltage of 6/-6 V. In addition, the calculated retention characteristic of the charges in the Si-NPs memory (>10 years) makes such memory structure promising for applications in non-volatile memory devices.",

keywords = "Al2O3-TiO nanolaminates, atomic layer deposition, Charge trapping memory, HfO2, MOS, retention time",

author = "Nazek El-Atab and Ammar Nayfeh and Turgut, {Berk Berkan} and Okyay, {Ali K.}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 ; Conference date: 27-07-2015 Through 30-07-2015",

year = "2015",

doi = "10.1109/NANO.2015.7388692",

language = "English (US)",

series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "663--665",

booktitle = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",

address = "United States",

}

El-Atab, N, Nayfeh, A, Turgut, BB & Okyay, AK 2015, MOS memory with ultrathin Al2O3-TiO₂ nanolaminates tunnel oxide and 2.85-nm Si-nanoparticles charge trapping layer. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388692, IEEE-NANO 2015 - 15th International Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 663-665, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 07/27/15. https://doi.org/10.1109/NANO.2015.7388692

MOS memory with ultrathin Al2O3-TiO₂ nanolaminates tunnel oxide and 2.85-nm Si-nanoparticles charge trapping layer. / El-Atab, Nazek; Nayfeh, Ammar; Turgut, Berk Berkan et al.
IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. p. 663-665 7388692 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - MOS memory with ultrathin Al2O3-TiO2 nanolaminates tunnel oxide and 2.85-nm Si-nanoparticles charge trapping layer

AU - El-Atab, Nazek

AU - Nayfeh, Ammar

AU - Turgut, Berk Berkan

AU - Okyay, Ali K.

PY - 2015

Y1 - 2015

N2 - In this work, a MOS memory with 4.56-nm ultrathin Al2O3-TiO2 nanolaminates thin film deposited by Atomic Layer Deposition (ALD) followed by 1-nm HfO2 tunnel oxide deposited by Plasma-Assisted ALD is studied. The charge trapping layer consists of 2.85-nm Si-nanoparticles (Si-NPs). A memory effect is observed using high frequency C-V measurements. The shift of the threshold voltage (Vt) obtained from the hysteresis measurements at 10/-10 V program/erase voltage is around 5 V and a 3 V Vt shift is obtained at low operating voltage of 6/-6 V. In addition, the calculated retention characteristic of the charges in the Si-NPs memory (>10 years) makes such memory structure promising for applications in non-volatile memory devices.

AB - In this work, a MOS memory with 4.56-nm ultrathin Al2O3-TiO2 nanolaminates thin film deposited by Atomic Layer Deposition (ALD) followed by 1-nm HfO2 tunnel oxide deposited by Plasma-Assisted ALD is studied. The charge trapping layer consists of 2.85-nm Si-nanoparticles (Si-NPs). A memory effect is observed using high frequency C-V measurements. The shift of the threshold voltage (Vt) obtained from the hysteresis measurements at 10/-10 V program/erase voltage is around 5 V and a 3 V Vt shift is obtained at low operating voltage of 6/-6 V. In addition, the calculated retention characteristic of the charges in the Si-NPs memory (>10 years) makes such memory structure promising for applications in non-volatile memory devices.

KW - Al2O3-TiO nanolaminates

KW - atomic layer deposition

KW - Charge trapping memory

KW - HfO2

KW - MOS

KW - retention time

UR - http://www.scopus.com/inward/record.url?scp=84964355794&partnerID=8YFLogxK

U2 - 10.1109/NANO.2015.7388692

DO - 10.1109/NANO.2015.7388692

M3 - Conference contribution

AN - SCOPUS:84964355794

T3 - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

SP - 663

EP - 665

BT - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015

Y2 - 27 July 2015 through 30 July 2015

ER -

El-Atab N, Nayfeh A, Turgut BB, Okyay AK. MOS memory with ultrathin Al2O3-TiO₂ nanolaminates tunnel oxide and 2.85-nm Si-nanoparticles charge trapping layer. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc. 2015. p. 663-665. 7388692. (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). doi: 10.1109/NANO.2015.7388692