MOS memory with double-layer high-κ tunnel oxide Al2O3/HfO2 and ZnO charge trapping layer

Nazek El-Atab; Ammar Nayfeh; Berk Berkan Turgut; Ali K. Okyay

doi:10.1109/NANO.2015.7388722

MOS memory with double-layer high-κ tunnel oxide Al2O3/HfO2 and ZnO charge trapping layer

Nazek El-Atab, Ammar Nayfeh, Berk Berkan Turgut, Ali K. Okyay

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

In this work, the effect of using a double layer of high-κ tunnel oxides Al2O3/HfO2 instead of a single layer Al2O3 in MOS memory with ZnO charge trapping layer is studied. A memory effect due to charging in the ZnO layer is observed using high frequency C-V measurements. The shift of the threshold voltage (Vt) obtained from the hysteresis measurements at 10/-10 V program/erase voltage is around 3.3 V with single layer tunnel oxide while 7 V with the double layer tunnel oxide with same total oxide thickness. In addition, the memory structures show long retention times (>10 years) which make them promising for applications in non-volatile memory devices. Moreover, the results highlight that tunnel band engineering can be used to further reduce the operating voltage and equivalent oxide thickness of future memory devices without sacrificing the memory performance.

Original language	English (US)
Title of host publication	IEEE-NANO 2015 - 15th International Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	766-768
Number of pages	3
ISBN (Electronic)	9781467381550
DOIs	https://doi.org/10.1109/NANO.2015.7388722
State	Published - 2015
Event	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: Jul 27 2015 → Jul 30 2015

Publication series

Name	IEEE-NANO 2015 - 15th International Conference on Nanotechnology

Conference

Conference	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Country/Territory	Italy
City	Rome
Period	07/27/15 → 07/30/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

Al2O3
atomic layer deposition
Charge trapping memory
HfO2
MOS
retention time
ZnO

ASJC Scopus subject areas

Process Chemistry and Technology
Electrical and Electronic Engineering
Ceramics and Composites
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

Access to Document

10.1109/NANO.2015.7388722

Cite this

El-Atab, N., Nayfeh, A., Turgut, B. B., & Okyay, A. K. (2015). MOS memory with double-layer high-κ tunnel oxide Al2O3/HfO2 and ZnO charge trapping layer. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 766-768). Article 7388722 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388722

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title = "MOS memory with double-layer high-κ tunnel oxide Al2O3/HfO2 and ZnO charge trapping layer",

abstract = "In this work, the effect of using a double layer of high-κ tunnel oxides Al2O3/HfO2 instead of a single layer Al2O3 in MOS memory with ZnO charge trapping layer is studied. A memory effect due to charging in the ZnO layer is observed using high frequency C-V measurements. The shift of the threshold voltage (Vt) obtained from the hysteresis measurements at 10/-10 V program/erase voltage is around 3.3 V with single layer tunnel oxide while 7 V with the double layer tunnel oxide with same total oxide thickness. In addition, the memory structures show long retention times (>10 years) which make them promising for applications in non-volatile memory devices. Moreover, the results highlight that tunnel band engineering can be used to further reduce the operating voltage and equivalent oxide thickness of future memory devices without sacrificing the memory performance.",

keywords = "Al2O3, atomic layer deposition, Charge trapping memory, HfO2, MOS, retention time, ZnO",

author = "Nazek El-Atab and Ammar Nayfeh and Turgut, {Berk Berkan} and Okyay, {Ali K.}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 ; Conference date: 27-07-2015 Through 30-07-2015",

year = "2015",

doi = "10.1109/NANO.2015.7388722",

language = "English (US)",

series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",

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El-Atab, N, Nayfeh, A, Turgut, BB & Okyay, AK 2015, MOS memory with double-layer high-κ tunnel oxide Al2O3/HfO2 and ZnO charge trapping layer. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388722, IEEE-NANO 2015 - 15th International Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 766-768, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 07/27/15. https://doi.org/10.1109/NANO.2015.7388722

MOS memory with double-layer high-κ tunnel oxide Al2O3/HfO2 and ZnO charge trapping layer. / El-Atab, Nazek; Nayfeh, Ammar; Turgut, Berk Berkan et al.
IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. p. 766-768 7388722 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - MOS memory with double-layer high-κ tunnel oxide Al2O3/HfO2 and ZnO charge trapping layer

AU - El-Atab, Nazek

AU - Nayfeh, Ammar

AU - Turgut, Berk Berkan

AU - Okyay, Ali K.

PY - 2015

Y1 - 2015

N2 - In this work, the effect of using a double layer of high-κ tunnel oxides Al2O3/HfO2 instead of a single layer Al2O3 in MOS memory with ZnO charge trapping layer is studied. A memory effect due to charging in the ZnO layer is observed using high frequency C-V measurements. The shift of the threshold voltage (Vt) obtained from the hysteresis measurements at 10/-10 V program/erase voltage is around 3.3 V with single layer tunnel oxide while 7 V with the double layer tunnel oxide with same total oxide thickness. In addition, the memory structures show long retention times (>10 years) which make them promising for applications in non-volatile memory devices. Moreover, the results highlight that tunnel band engineering can be used to further reduce the operating voltage and equivalent oxide thickness of future memory devices without sacrificing the memory performance.

AB - In this work, the effect of using a double layer of high-κ tunnel oxides Al2O3/HfO2 instead of a single layer Al2O3 in MOS memory with ZnO charge trapping layer is studied. A memory effect due to charging in the ZnO layer is observed using high frequency C-V measurements. The shift of the threshold voltage (Vt) obtained from the hysteresis measurements at 10/-10 V program/erase voltage is around 3.3 V with single layer tunnel oxide while 7 V with the double layer tunnel oxide with same total oxide thickness. In addition, the memory structures show long retention times (>10 years) which make them promising for applications in non-volatile memory devices. Moreover, the results highlight that tunnel band engineering can be used to further reduce the operating voltage and equivalent oxide thickness of future memory devices without sacrificing the memory performance.

KW - Al2O3

KW - atomic layer deposition

KW - Charge trapping memory

KW - HfO2

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KW - retention time

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ER -

El-Atab N, Nayfeh A, Turgut BB, Okyay AK. MOS memory with double-layer high-κ tunnel oxide Al2O3/HfO2 and ZnO charge trapping layer. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc. 2015. p. 766-768. 7388722. (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). doi: 10.1109/NANO.2015.7388722

MOS memory with double-layer high-κ tunnel oxide Al2O3/HfO2 and ZnO charge trapping layer

Abstract

Publication series

Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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