Morphology and wetting layer properties of InAs/GaAs nanostructures

Chao Zhao, Yonghai Chen*, Bo Xu, Chenguang Tang, Zhanguo Wang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


In this work, we present the growth of InAs rings by droplet epitaxy. A complete process from the rings formation to their density saturation has been demonstrated. A morphological evolution with the varying of the indium deposition amount has been clearly observed. Our results indicate that there is a critical deposition amount (∼1.1 ML) for the indium to form InAs dots before droplets form; there is also a critical deposition amount (∼1.4 ML) to form InAs rings, but it is caused by the formation of droplets as the deposition amount increases. The density of the rings saturates when the deposition amount exceeds ∼3.3 ML, because the adsorbed indium atoms block sites for further adsorption and the following supplied In only contributes to the size increase of In droplets. Still, as the In deposition amount increases, we can find coupled quantum rings. Moreover, the wetting layer properties of these structures are studied by reflectance difference spectroscopy, which shows a complicated evolution with the In amount.

Original languageEnglish (US)
Pages (from-to)789-792
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number4
StatePublished - 2009
Event5th International Conference on Semiconductor Quantum Dots, QD 2008 - Gyeongju, Korea, Republic of
Duration: May 11 2008May 16 2008

ASJC Scopus subject areas

  • Condensed Matter Physics


Dive into the research topics of 'Morphology and wetting layer properties of InAs/GaAs nanostructures'. Together they form a unique fingerprint.

Cite this