Morphological transformation of a crystal-melt interface during unidirectional growth of silicon

K. Fujiwara*, R. Gotoh, X. B. Yang, H. Koizumi, J. Nozawa, S. Uda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Scopus citations


We investigated the morphological transformation at Si (1 1 0), (1 1 2) and (1 1 1) crystal-melt interfaces during unidirectional growth by in situ observation. It was directly observed that the morphology of the Si (1 1 0) and (1 1 2) crystal-melt interfaces was transformed from planar to zigzag facets at high growth velocities, although no such morphological transformation was observed at Si (1 1 1) interfaces. It was shown that a zigzag faceted interface was formed when a wavy perturbation was introduced into the planar interface, and that the perturbation was amplified. This zigzag facet formation behavior of the Si (1 1 0) and (1 1 2) interfaces is similar to that of the Si (1 0 0) interface. It is concluded that this formation of a zigzag faceted interface is universal at the crystal-melt interface of rough planes of Si, and that a negative temperature gradient at the crystal-melt interface is required for morphological transformation from planar to zigzag facets.

Original languageEnglish (US)
Pages (from-to)4700-4708
Number of pages9
JournalActa Materialia
Issue number11
StatePublished - Jun 2011
Externally publishedYes


  • Crystal-melt interface
  • Crystallization
  • Semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys


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