Morphological evaluation of epitaxial GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

Keyphrases

• Crystal Orientation 50%
• Epitaxial 50%
• Epitaxial GaN 100%
• GaN Buffer 50%
• GaN Films 100%
• Growth Temperature 50%
• Low Temperature 50%
• Metal Organic Vapor Phase Epitaxy (MOVPE) 100%
• Morphological Evaluation 100%
• Peak-to-valley 50%
• R-plane Sapphire 100%
• Rough Morphology 50%
• Sapphire Substrate 50%
• Surface Roughness 50%

Material Science

• Morphology 100%
• Sapphire 100%
• Surface Roughness 50%
• Vapor Phase Epitaxy 100%