MoOx and WOx based hole-selective contacts for wafer-based Si solar cells

Stephanie Essig, Julie Dréon, Jérémie Werner, Philipp Löper, Stefaan De Wolf, Mathieu Boccard, Christophe Ballif

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Highly-transparent carrier-selective front contacts open a pathway towards entirely dopant free Si solar cells. Holeselective a-Si:H/MoOx/ITO front contact stacks were already successfully applied in such novel devices. However, for optimum device performance, further improvements are required: We evaluate the use of the high-work-function material WOx as a replacement for MoOx in an attempt to reduce optical absorption losses. In addition, we investigate the use of thin hydrogenated SiOX instead of a-Si:H, and the impact of the residual pressure for MoOx evaporation.
Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages3
ISBN (Print)9781509056057
StatePublished - Jun 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to thank Raphaël Monnard and Guillaume Charitat from EPFL and Nicolas Badel from CSEM
for work performed in the context of this publication. S. Essig holds a Marie Skłodowska-Curie Individual Fellowship from
the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme
(grant agreement No: 706744, action acronym: COLIBRI). Part of this work was supported by the European Union’s
Horizon 2020 Programme for research, technological development and demonstration Grant Agreements no. 727529
(project DISC).


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