Abstract
Highly-transparent carrier-selective front contacts open a pathway towards entirely dopant free Si solar cells. Holeselective a-Si:H/MoOx/ITO front contact stacks were already successfully applied in such novel devices. However, for optimum device performance, further improvements are required: We evaluate the use of the high-work-function material WOx as a replacement for MoOx in an attempt to reduce optical absorption losses. In addition, we investigate the use of thin hydrogenated SiOX instead of a-Si:H, and the impact of the residual pressure for MoOx evaporation.
Original language | English (US) |
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Title of host publication | 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 1-3 |
Number of pages | 3 |
ISBN (Print) | 9781509056057 |
DOIs | |
State | Published - Jun 2017 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledgements: The authors would like to thank Raphaël Monnard and Guillaume Charitat from EPFL and Nicolas Badel from CSEM
for work performed in the context of this publication. S. Essig holds a Marie Skłodowska-Curie Individual Fellowship from
the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme
(grant agreement No: 706744, action acronym: COLIBRI). Part of this work was supported by the European Union’s
Horizon 2020 Programme for research, technological development and demonstration Grant Agreements no. 727529
(project DISC).