Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates

Yating Wan, Zeyu Zhang, Ruilin Chao, Justin Norman, Daehwan Jung, Chen Shang, Qiang Li, M. J. Kennedy, Di Liang, Chong Zhang, Jin Wei Shi, Arthur C. Gossard, Kei May Lau, John E. Bowers

Research output: Contribution to journalArticlepeer-review

70 Scopus citations


We report InAs/InGaAs quantum dot (QD) waveguide photodetectors (PD) monolithically grown on silicon substrates. A high-crystalline quality GaAs-on-Si template was achieved by aspect ratio trapping together with the combined effects of cyclic thermal annealing and strain-balancing layer stacks. An ultra-low dark current of 0.8 nA and an internal responsivity of 0.9 A/W were measured in the O band. We also report, to the best of our knowledge, the first characterization of high-speed performance and the first demonstration of the on-chip photodetection for this QD-on-silicon system. The monolithically integrated waveguide PD shares the same platform as the previously demonstrated micro-ring lasers and can thus be integrated with laser sources for power monitors or amplifiers for pre-amplified receivers.
Original languageEnglish (US)
Pages (from-to)27715-27723
Number of pages9
JournalOptics Express
Issue number22
StatePublished - Oct 30 2017
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-18

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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