Monolithic intracavity laser-modulator device fabrication using postgrowth processing of 1.55 μm heterostructures

V. Aimez; J. Beauvais; J. Beerens; S. L. Ng; B. S. Ooi

doi:10.1063/1.1421234

Monolithic intracavity laser-modulator device fabrication using postgrowth processing of 1.55 μm heterostructures

V. Aimez^*, J. Beauvais, J. Beerens, S. L. Ng, B. S. Ooi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

In this letter, we present the attractive characteristics of a fabrication method based on quantum-well intermixing induced by low energy ion implantation for the realization of photonic integrated circuits on GaInAsP-InP heterostructures. Intracavity electro-absorption modulators monolithically integrated with laser devices were fabricated, using this postgrowth technique. The modulator section of the integrated devices was blueshifted by 75 nm while keeping the laser section unshifted and preserving very low values of the lasing threshold current density. Modulation depths in excess of 10 dB/V at 1.55 μm were obtained on these integrated devices which incorporate both a modulator and a laser.

Original language	English (US)
Pages (from-to)	3582-3584
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	22
DOIs	https://doi.org/10.1063/1.1421234
State	Published - Nov 26 2001
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1421234

Cite this

@article{4dd59783182043b597b9e6ec4e65a670,

title = "Monolithic intracavity laser-modulator device fabrication using postgrowth processing of 1.55 μm heterostructures",

abstract = "In this letter, we present the attractive characteristics of a fabrication method based on quantum-well intermixing induced by low energy ion implantation for the realization of photonic integrated circuits on GaInAsP-InP heterostructures. Intracavity electro-absorption modulators monolithically integrated with laser devices were fabricated, using this postgrowth technique. The modulator section of the integrated devices was blueshifted by 75 nm while keeping the laser section unshifted and preserving very low values of the lasing threshold current density. Modulation depths in excess of 10 dB/V at 1.55 μm were obtained on these integrated devices which incorporate both a modulator and a laser.",

author = "V. Aimez and J. Beauvais and J. Beerens and Ng, {S. L.} and Ooi, {B. S.}",

year = "2001",

month = nov,

day = "26",

doi = "10.1063/1.1421234",

language = "English (US)",

volume = "79",

pages = "3582--3584",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "22",

}

TY - JOUR

T1 - Monolithic intracavity laser-modulator device fabrication using postgrowth processing of 1.55 μm heterostructures

AU - Aimez, V.

AU - Beauvais, J.

AU - Beerens, J.

AU - Ng, S. L.

AU - Ooi, B. S.

PY - 2001/11/26

Y1 - 2001/11/26

N2 - In this letter, we present the attractive characteristics of a fabrication method based on quantum-well intermixing induced by low energy ion implantation for the realization of photonic integrated circuits on GaInAsP-InP heterostructures. Intracavity electro-absorption modulators monolithically integrated with laser devices were fabricated, using this postgrowth technique. The modulator section of the integrated devices was blueshifted by 75 nm while keeping the laser section unshifted and preserving very low values of the lasing threshold current density. Modulation depths in excess of 10 dB/V at 1.55 μm were obtained on these integrated devices which incorporate both a modulator and a laser.

AB - In this letter, we present the attractive characteristics of a fabrication method based on quantum-well intermixing induced by low energy ion implantation for the realization of photonic integrated circuits on GaInAsP-InP heterostructures. Intracavity electro-absorption modulators monolithically integrated with laser devices were fabricated, using this postgrowth technique. The modulator section of the integrated devices was blueshifted by 75 nm while keeping the laser section unshifted and preserving very low values of the lasing threshold current density. Modulation depths in excess of 10 dB/V at 1.55 μm were obtained on these integrated devices which incorporate both a modulator and a laser.

UR - http://www.scopus.com/inward/record.url?scp=0035956088&partnerID=8YFLogxK

U2 - 10.1063/1.1421234

DO - 10.1063/1.1421234

M3 - Article

AN - SCOPUS:0035956088

SN - 0003-6951

VL - 79

SP - 3582

EP - 3584

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Monolithic intracavity laser-modulator device fabrication using postgrowth processing of 1.55 μm heterostructures

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this