Monolithic integrated millimeter-wave IMPATT transmitter in standard CMOS technology

Talal Al-Attar; Thomas H. Lee

doi:10.1109/TMTT.2005.858379

Monolithic integrated millimeter-wave IMPATT transmitter in standard CMOS technology

Talal Al-Attar^*, Thomas H. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

This paper describes impact avalanche transit time (IMPATT) diodes fabricated in 0.18-μm standard complementary metal-oxide-semiconductor technology to enable operation at 77 GHz. The lateral IMPATT diodes are integrated with a microstrip patch antenna, modified to provide impedance matching and widen the tuning range. The antenna dimensions and the impedance matching are designed using the high-frequency electromagnetic field solver Sonnet. The output spectrum has no visible spurious components. The transmitted power is -62 dB m at 76 GHz. The measured frequency is within 1.3% of the simulated value. It is hoped that this device will find application in automotive and communication systems.

Original language	English (US)
Pages (from-to)	3557-3561
Number of pages	5
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	53
Issue number	11
DOIs	https://doi.org/10.1109/TMTT.2005.858379
State	Published - Nov 2005
Externally published	Yes

Keywords

Complementary metal-oxide-semiconductor technology (CMOS)
Impact avalanche transit time (IMPATT) diode
Microstrip patch antenna
Sonnet
Stub
Vector network analyzer (vna)

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TMTT.2005.858379

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title = "Monolithic integrated millimeter-wave IMPATT transmitter in standard CMOS technology",

abstract = "This paper describes impact avalanche transit time (IMPATT) diodes fabricated in 0.18-μm standard complementary metal-oxide-semiconductor technology to enable operation at 77 GHz. The lateral IMPATT diodes are integrated with a microstrip patch antenna, modified to provide impedance matching and widen the tuning range. The antenna dimensions and the impedance matching are designed using the high-frequency electromagnetic field solver Sonnet. The output spectrum has no visible spurious components. The transmitted power is -62 dB m at 76 GHz. The measured frequency is within 1.3% of the simulated value. It is hoped that this device will find application in automotive and communication systems.",

keywords = "Complementary metal-oxide-semiconductor technology (CMOS), Impact avalanche transit time (IMPATT) diode, Microstrip patch antenna, Sonnet, Stub, Vector network analyzer (vna)",

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year = "2005",

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AU - Lee, Thomas H.

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AB - This paper describes impact avalanche transit time (IMPATT) diodes fabricated in 0.18-μm standard complementary metal-oxide-semiconductor technology to enable operation at 77 GHz. The lateral IMPATT diodes are integrated with a microstrip patch antenna, modified to provide impedance matching and widen the tuning range. The antenna dimensions and the impedance matching are designed using the high-frequency electromagnetic field solver Sonnet. The output spectrum has no visible spurious components. The transmitted power is -62 dB m at 76 GHz. The measured frequency is within 1.3% of the simulated value. It is hoped that this device will find application in automotive and communication systems.

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KW - Microstrip patch antenna

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KW - Stub

KW - Vector network analyzer (vna)

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JF - IEEE Transactions on Microwave Theory and Techniques

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Monolithic integrated millimeter-wave IMPATT transmitter in standard CMOS technology

Abstract

Keywords

ASJC Scopus subject areas

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