Monolithic InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low energy arsenic ion implantation induced intermixing

S. L. Ng; H. S. Lim; B. S. Ooi; Y. L. Lam; Y. Zhou; Y. C. Chan; V. Aimez; J. Beauvais; J. Beerens

Monolithic InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low energy arsenic ion implantation induced intermixing

S. L. Ng^*, H. S. Lim, B. S. Ooi, Y. L. Lam, Y. Zhou, Y. C. Chan, V. Aimez, J. Beauvais, J. Beerens

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this study, 10-channel monolithic multiple wavelength electro-absorption (EA) modulators were fabricated onto a single chip using a one-step quantum well intermixing technique based on arsenic ion implantation through a graded thickness silicon dioxide mask. The resultant modulators were characterized at room temperature using end-fire-coupling technique.

Original language	English (US)
Pages (from-to)	9-10
Number of pages	2
Journal	LEOS Summer Topical Meeting
State	Published - 2000
Externally published	Yes
Event	2000 IEEE/LEOS Summer Topical Meeting - Aventura, FL, USA Duration: Jul 24 2000 → Jul 28 2000

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

@article{255f6533888e45dbb00739ffd4774122,

title = "Monolithic InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low energy arsenic ion implantation induced intermixing",

abstract = "In this study, 10-channel monolithic multiple wavelength electro-absorption (EA) modulators were fabricated onto a single chip using a one-step quantum well intermixing technique based on arsenic ion implantation through a graded thickness silicon dioxide mask. The resultant modulators were characterized at room temperature using end-fire-coupling technique.",

author = "Ng, {S. L.} and Lim, {H. S.} and Ooi, {B. S.} and Lam, {Y. L.} and Y. Zhou and Chan, {Y. C.} and V. Aimez and J. Beauvais and J. Beerens",

year = "2000",

language = "English (US)",

pages = "9--10",

journal = "LEOS Summer Topical Meeting",

issn = "1099-4742",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2000 IEEE/LEOS Summer Topical Meeting ; Conference date: 24-07-2000 Through 28-07-2000",

}

TY - JOUR

T1 - Monolithic InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low energy arsenic ion implantation induced intermixing

AU - Ng, S. L.

AU - Lim, H. S.

AU - Ooi, B. S.

AU - Lam, Y. L.

AU - Zhou, Y.

AU - Chan, Y. C.

AU - Aimez, V.

AU - Beauvais, J.

AU - Beerens, J.

PY - 2000

Y1 - 2000

N2 - In this study, 10-channel monolithic multiple wavelength electro-absorption (EA) modulators were fabricated onto a single chip using a one-step quantum well intermixing technique based on arsenic ion implantation through a graded thickness silicon dioxide mask. The resultant modulators were characterized at room temperature using end-fire-coupling technique.

AB - In this study, 10-channel monolithic multiple wavelength electro-absorption (EA) modulators were fabricated onto a single chip using a one-step quantum well intermixing technique based on arsenic ion implantation through a graded thickness silicon dioxide mask. The resultant modulators were characterized at room temperature using end-fire-coupling technique.

UR - http://www.scopus.com/inward/record.url?scp=0033681603&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033681603

SN - 1099-4742

SP - 9

EP - 10

JO - LEOS Summer Topical Meeting

JF - LEOS Summer Topical Meeting

T2 - 2000 IEEE/LEOS Summer Topical Meeting

Y2 - 24 July 2000 through 28 July 2000

ER -

Monolithic InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low energy arsenic ion implantation induced intermixing

Abstract

ASJC Scopus subject areas

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