Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

Thomas Frost; Shafat Jahangir; Ethan Stark; Saniya Deshpande; Arnab Shashi Hazari; Chao Zhao; Boon S. Ooi; Pallab K. Bhattacharya

doi:10.1021/nl5015603

Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

Thomas Frost, Shafat Jahangir, Ethan Stark, Saniya Deshpande, Arnab Shashi Hazari, Chao Zhao, Boon S. Ooi, Pallab K. Bhattacharya

Research output: Contribution to journal › Article › peer-review

136 Scopus citations

Abstract

A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

Original language	English (US)
Pages (from-to)	4535-4541
Number of pages	7
Journal	Nano Letters
Volume	14
Issue number	8
DOIs	https://doi.org/10.1021/nl5015603
State	Published - Jul 3 2014

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The work was supported by the National Science Foundation (MRSEC program) under Grant DMR-1120923 and by the King Abdullah University of Science and Technology, Kingdom of Saudi Arabia, under Grant CRG-1-2012-001-010-MIC. T.F. and E.S. acknowledge support provided by National Science Foundation Graduate Research Fellowships. Epitaxial growth and device fabrication were done in the Lurie Nanofabrication Facility, a member of the National Nanotechnology Infrastructure Network funded by the National Science Foundation.

ASJC Scopus subject areas

Bioengineering
General Materials Science
General Chemistry
Mechanical Engineering
Condensed Matter Physics

Access to Document

10.1021/nl5015603

Cite this

@article{7ed8d631c4e64dadafefbf09e9aedff4,

title = "Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon",

abstract = "A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. {\textcopyright} 2014 American Chemical Society.",

author = "Thomas Frost and Shafat Jahangir and Ethan Stark and Saniya Deshpande and Hazari, {Arnab Shashi} and Chao Zhao and Ooi, {Boon S.} and Bhattacharya, {Pallab K.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The work was supported by the National Science Foundation (MRSEC program) under Grant DMR-1120923 and by the King Abdullah University of Science and Technology, Kingdom of Saudi Arabia, under Grant CRG-1-2012-001-010-MIC. T.F. and E.S. acknowledge support provided by National Science Foundation Graduate Research Fellowships. Epitaxial growth and device fabrication were done in the Lurie Nanofabrication Facility, a member of the National Nanotechnology Infrastructure Network funded by the National Science Foundation.",

year = "2014",

month = jul,

day = "3",

doi = "10.1021/nl5015603",

language = "English (US)",

volume = "14",

pages = "4535--4541",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "8",

}

TY - JOUR

T1 - Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

AU - Frost, Thomas

AU - Jahangir, Shafat

AU - Stark, Ethan

AU - Deshpande, Saniya

AU - Hazari, Arnab Shashi

AU - Zhao, Chao

AU - Ooi, Boon S.

AU - Bhattacharya, Pallab K.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The work was supported by the National Science Foundation (MRSEC program) under Grant DMR-1120923 and by the King Abdullah University of Science and Technology, Kingdom of Saudi Arabia, under Grant CRG-1-2012-001-010-MIC. T.F. and E.S. acknowledge support provided by National Science Foundation Graduate Research Fellowships. Epitaxial growth and device fabrication were done in the Lurie Nanofabrication Facility, a member of the National Nanotechnology Infrastructure Network funded by the National Science Foundation.

PY - 2014/7/3

Y1 - 2014/7/3

N2 - A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

AB - A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

UR - http://hdl.handle.net/10754/563704

UR - https://pubs.acs.org/doi/10.1021/nl5015603

UR - http://www.scopus.com/inward/record.url?scp=84906099402&partnerID=8YFLogxK

U2 - 10.1021/nl5015603

DO - 10.1021/nl5015603

M3 - Article

SN - 1530-6984

VL - 14

SP - 4535

EP - 4541

JO - Nano Letters

JF - Nano Letters

IS - 8

ER -

Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this