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Molecular beam epitaxial growth of nitrogen-doped ZnSe with ion doping technique
K. Ohkawa
*
, T. Mitsuyu, O. Yamazaki
*
Corresponding author for this work
Research output
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Contribution to journal
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Article
›
peer-review
40
Scopus citations
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Keyphrases
Mass Separator
66%
N-doped Layers
33%
Ion Current Density
33%
Strong Donor
33%
Ion-ion
33%
Strong Acceptor
33%
Energy Current Density
33%
Ion Gun
33%
Material Science
Epitaxy
100%
Photoluminescence
100%
Gallium Arsenide
33%
Density
33%
Chemical Engineering
Epitaxial Growth
100%