Molecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films

C. H. Sim, V. Ko, K. L. Teo*, Zaibing Guo, T. Liew, T. C. Chong

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review


    We report on the growth of Co-Mn-Ge thin films on various substrates using low-temperature molecular beam epitaxy. The magnetic and transport properties of the films were investigated. The close-to-stoichiometric Co2MnGe film grown on GaAs(1 0 0) shows ferromagnetism and exhibits anomalous Hall effects at room temperature. The irreversibility of zero-field-cooled and field-cooled measurements suggests the formation of superparamagnetic clusters. On the other hand, the growth of Co2MnGe films on Ge buffer layer and Si(1 0 0) substrate is found to be unsuitable due to the degraded crystal qualities with weak magnetization signals.

    Original languageEnglish (US)
    Pages (from-to)392-397
    Number of pages6
    JournalJournal of Crystal Growth
    Issue number2
    StatePublished - Oct 15 2007


    • A1. Reflection high-energy electron diffraction
    • A3. Molecular beam epitaxy
    • B1. Heusler alloy
    • B3. Spintronics

    ASJC Scopus subject areas

    • Condensed Matter Physics


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