Modulation of Weyl semimetal state in half-Heusler GdPtBi enabled by hydrostatic pressure

Junli Zhang; Lei Jin; Jie Chen; Chenhui Zhang; Peng Li; Ye Yuan; Yan Wen; Qiang Zhang; Xiaoming Zhang; Enke Liu; Wenhong Wang; Xixiang Zhang

doi:10.1088/1367-2630/ac1af6

Modulation of Weyl semimetal state in half-Heusler GdPtBi enabled by hydrostatic pressure

Junli Zhang, Lei Jin, Jie Chen, Chenhui Zhang, Peng Li, Ye Yuan, Yan Wen, Qiang Zhang, Xiaoming Zhang, Enke Liu, Wenhong Wang, Xixiang Zhang

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The excitation of Weyl semimetals obeys the relativistic Weyl equation and attracted significant research attention due to its unique electronic state. In this paper, we present an emerging approach for modulating the electron state of half-Heusler GdPtBi by hydrostatic pressure. Through measurements of the temperature-dependent resistivity and magnetoresistance (MR), a phase transition from a Weyl semimetal to a semiconductor state was identified at about 2.0 GPa upon increasing the hydrostatic pressure. Electron transport in semiconductive GdPtBi is found to be well describable by Mott variable-range-hopping. The simulated electronic structures under different hydrostatic pressures further indicate that changes in the electronic states of atoms in the basic unit cell result in a phase transition in GdPtBi. This work presents an effective strategy for modulating the electronic state by tuning the lattice constant.

Original language	English (US)
Journal	New Journal of Physics
DOIs	https://doi.org/10.1088/1367-2630/ac1af6
State	Published - Aug 5 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-08-10
Acknowledged KAUST grant number(s): CRF-2015-2549-CRG4
Acknowledgements: This work was financially supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR), Saudi Arabia, under Award No. CRF-2015-2549-CRG4, and the China Postdoctoral Science Foundation No. Y6BK011M51. J.L.Z. acknowledges the financial support from the National Natural Science Foundation of China (No. 11974150). W.H.W acknowledges support from the National Natural Science Foundation of China (No.11974406) and Fujian Innovation Academy, Chinese Academy of Sciences.

ASJC Scopus subject areas

General Physics and Astronomy

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10.1088/1367-2630/ac1af6

https://repository.kaust.edu.sa/bitstream/10754/670471/1/Modulation_Zhang%2bet%2bal_2021_New_J._Phys._10.1088_1367-2630_ac1af6.pdf

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@article{dd8679ff1bbd41f497c4e51ce8bcdf87,

title = "Modulation of Weyl semimetal state in half-Heusler GdPtBi enabled by hydrostatic pressure",

abstract = "The excitation of Weyl semimetals obeys the relativistic Weyl equation and attracted significant research attention due to its unique electronic state. In this paper, we present an emerging approach for modulating the electron state of half-Heusler GdPtBi by hydrostatic pressure. Through measurements of the temperature-dependent resistivity and magnetoresistance (MR), a phase transition from a Weyl semimetal to a semiconductor state was identified at about 2.0 GPa upon increasing the hydrostatic pressure. Electron transport in semiconductive GdPtBi is found to be well describable by Mott variable-range-hopping. The simulated electronic structures under different hydrostatic pressures further indicate that changes in the electronic states of atoms in the basic unit cell result in a phase transition in GdPtBi. This work presents an effective strategy for modulating the electronic state by tuning the lattice constant.",

author = "Junli Zhang and Lei Jin and Jie Chen and Chenhui Zhang and Peng Li and Ye Yuan and Yan Wen and Qiang Zhang and Xiaoming Zhang and Enke Liu and Wenhong Wang and Xixiang Zhang",

note = "KAUST Repository Item: Exported on 2021-08-10 Acknowledged KAUST grant number(s): CRF-2015-2549-CRG4 Acknowledgements: This work was financially supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR), Saudi Arabia, under Award No. CRF-2015-2549-CRG4, and the China Postdoctoral Science Foundation No. Y6BK011M51. J.L.Z. acknowledges the financial support from the National Natural Science Foundation of China (No. 11974150). W.H.W acknowledges support from the National Natural Science Foundation of China (No.11974406) and Fujian Innovation Academy, Chinese Academy of Sciences.",

year = "2021",

month = aug,

day = "5",

doi = "10.1088/1367-2630/ac1af6",

language = "English (US)",

journal = "New Journal of Physics",

issn = "1367-2630",

publisher = "IOP Publishing",

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TY - JOUR

T1 - Modulation of Weyl semimetal state in half-Heusler GdPtBi enabled by hydrostatic pressure

AU - Zhang, Junli

AU - Jin, Lei

AU - Chen, Jie

AU - Zhang, Chenhui

AU - Li, Peng

AU - Yuan, Ye

AU - Wen, Yan

AU - Zhang, Qiang

AU - Zhang, Xiaoming

AU - Liu, Enke

AU - Wang, Wenhong

AU - Zhang, Xixiang

N1 - KAUST Repository Item: Exported on 2021-08-10 Acknowledged KAUST grant number(s): CRF-2015-2549-CRG4 Acknowledgements: This work was financially supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR), Saudi Arabia, under Award No. CRF-2015-2549-CRG4, and the China Postdoctoral Science Foundation No. Y6BK011M51. J.L.Z. acknowledges the financial support from the National Natural Science Foundation of China (No. 11974150). W.H.W acknowledges support from the National Natural Science Foundation of China (No.11974406) and Fujian Innovation Academy, Chinese Academy of Sciences.

PY - 2021/8/5

Y1 - 2021/8/5

N2 - The excitation of Weyl semimetals obeys the relativistic Weyl equation and attracted significant research attention due to its unique electronic state. In this paper, we present an emerging approach for modulating the electron state of half-Heusler GdPtBi by hydrostatic pressure. Through measurements of the temperature-dependent resistivity and magnetoresistance (MR), a phase transition from a Weyl semimetal to a semiconductor state was identified at about 2.0 GPa upon increasing the hydrostatic pressure. Electron transport in semiconductive GdPtBi is found to be well describable by Mott variable-range-hopping. The simulated electronic structures under different hydrostatic pressures further indicate that changes in the electronic states of atoms in the basic unit cell result in a phase transition in GdPtBi. This work presents an effective strategy for modulating the electronic state by tuning the lattice constant.

AB - The excitation of Weyl semimetals obeys the relativistic Weyl equation and attracted significant research attention due to its unique electronic state. In this paper, we present an emerging approach for modulating the electron state of half-Heusler GdPtBi by hydrostatic pressure. Through measurements of the temperature-dependent resistivity and magnetoresistance (MR), a phase transition from a Weyl semimetal to a semiconductor state was identified at about 2.0 GPa upon increasing the hydrostatic pressure. Electron transport in semiconductive GdPtBi is found to be well describable by Mott variable-range-hopping. The simulated electronic structures under different hydrostatic pressures further indicate that changes in the electronic states of atoms in the basic unit cell result in a phase transition in GdPtBi. This work presents an effective strategy for modulating the electronic state by tuning the lattice constant.

UR - http://hdl.handle.net/10754/670471

UR - https://iopscience.iop.org/article/10.1088/1367-2630/ac1af6

U2 - 10.1088/1367-2630/ac1af6

DO - 10.1088/1367-2630/ac1af6

M3 - Article

SN - 1367-2630

JO - New Journal of Physics

JF - New Journal of Physics

ER -

Modulation of Weyl semimetal state in half-Heusler GdPtBi enabled by hydrostatic pressure

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