Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending

Engineering

• Strain 100%
• Bends 66%
• Characteristics 50%
• Two Dimensional 33%
• High Resolution 16%
• Current Output 16%
• Thin Films 16%
• Piezoelectric 16%
• Computational Simulation 16%
• Strain Effect 16%
• Charge Density 16%
• Test Condition 16%
• Ray Diffraction 16%
• Gas Channel 16%
• Supports 16%
• Engineering 16%
• Applications 16%
• Electronic Devices 16%
• Cu Film 16%
• Photonics Device 16%

Physics

• Modulation 50%
• Effect of Strain 50%
• Transfer Process 50%
• Bending 50%
• High Electron Mobility Transistors 33%
• Electron Gas 33%
• Threshold Voltage 33%
• Output 33%
• High Resolution 16%
• Thin Films 16%
• Piezoelectricity 16%
• Raman Spectroscopy 16%
• Electromechanical Device 16%
• Transferring 16%
• Utilization 16%
• Value 16%

Material Science

• Thin Films 16%
• Electrical Property 16%