The growth of In2 O3 nanowires on Si substrate with different zinc doping levels has been achieved by a vapor transport and condensation method. The atomic percentage in doping level is approximately proportional to the weight of ZnO powder added in the source. The ultraviolet (UV) and green light photoemissions of the In2 O3 nanowires are depressed and enhanced, respectively, with the doping level of Zn impurity. The UV and green light peaks are attributed to oxygen vacancy and zinc impurity energy levels. Similar tuning by other impurities can be expected and will be beneficial for possible optoelectronic applications.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Feb 2006|
Bibliographical noteFunding Information:
The research is supported by the Republic of China National Science Council Grant No. NSC 94-2115-E-007-018 and Ministry of Education Grant No. 91-E-FA04-1-4.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)