Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

Dongyoon Khim, Yen-Hung Lin, Sungho Nam, Hendrik Faber, Kornelius Tetzner, Ruipeng Li, Qiang Zhang, Jun Li, Xixiang Zhang, Thomas D. Anthopoulos

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96 Scopus citations

Abstract

This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.
Original languageEnglish (US)
Pages (from-to)1605837
JournalAdvanced Materials
Volume29
Issue number19
DOIs
StatePublished - Mar 15 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: D.K., Y.-H.L., H.F., and T.D.A. are grateful to the European Research Council (ERC) AMPRO Project No. 280221 for financial support. Q.Z., J.L., and X.Z., are grateful to KAUST for the financial support. CHESS was supported by the NSF & NIH/NIGMS via NSF Award DMR-1332208.

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