Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700 mV

L. Fesquet; S. Olibet; J. Damon-Lacoste; S. De Wolf; A. Hessler-Wyser; C. Monachon; C. Ballif

doi:10.1109/PVSC.2009.5411173

Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700 mV

L. Fesquet^*, S. Olibet, J. Damon-Lacoste, S. De Wolf, A. Hessler-Wyser, C. Monachon, C. Ballif

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

44 Scopus citations

Abstract

Crystalline silicon wafer (c-Si) can be extremely well passivated by plasma enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si:H) films. As a result, on flat substrates, solar cells with very high open circuit voltage are readily obtained. On textured substrates however the passivation is more cumbersome, likely due to the presence of localized recombinative paths situated at the pyramid valleys. Here, we show that this issue may be resolved by selecting a silicon substrate morphology featuring large pyramids. Chemical post-texturization treatments can further reduce the surface recombination velocity. This sequence has allowed us to fabricate solar cells with open circuit voltage over 700 mV, demonstrating also on device level the effect of pyramid density and surface micro-roughness on the surface passivation quality.

Original language	English (US)
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	754-758
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2009.5411173
State	Published - 2009
Externally published	Yes
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: Jun 7 2009 → Jun 12 2009

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	06/7/09 → 06/12/09

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/PVSC.2009.5411173

Cite this

Fesquet, L., Olibet, S., Damon-Lacoste, J., De Wolf, S., Hessler-Wyser, A., Monachon, C., & Ballif, C. (2009). Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700 mV. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 754-758). Article 5411173 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411173

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title = "Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700 mV",

abstract = "Crystalline silicon wafer (c-Si) can be extremely well passivated by plasma enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si:H) films. As a result, on flat substrates, solar cells with very high open circuit voltage are readily obtained. On textured substrates however the passivation is more cumbersome, likely due to the presence of localized recombinative paths situated at the pyramid valleys. Here, we show that this issue may be resolved by selecting a silicon substrate morphology featuring large pyramids. Chemical post-texturization treatments can further reduce the surface recombination velocity. This sequence has allowed us to fabricate solar cells with open circuit voltage over 700 mV, demonstrating also on device level the effect of pyramid density and surface micro-roughness on the surface passivation quality.",

author = "L. Fesquet and S. Olibet and J. Damon-Lacoste and {De Wolf}, S. and A. Hessler-Wyser and C. Monachon and C. Ballif",

year = "2009",

doi = "10.1109/PVSC.2009.5411173",

language = "English (US)",

isbn = "9781424429509",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "754--758",

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note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Fesquet, L, Olibet, S, Damon-Lacoste, J, De Wolf, S, Hessler-Wyser, A, Monachon, C & Ballif, C 2009, Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700 mV. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411173, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 754-758, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 06/7/09. https://doi.org/10.1109/PVSC.2009.5411173

Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700 mV. / Fesquet, L.; Olibet, S.; Damon-Lacoste, J. et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 754-758 5411173 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Fesquet, L.

AU - Olibet, S.

AU - Damon-Lacoste, J.

AU - De Wolf, S.

AU - Hessler-Wyser, A.

AU - Monachon, C.

AU - Ballif, C.

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AB - Crystalline silicon wafer (c-Si) can be extremely well passivated by plasma enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si:H) films. As a result, on flat substrates, solar cells with very high open circuit voltage are readily obtained. On textured substrates however the passivation is more cumbersome, likely due to the presence of localized recombinative paths situated at the pyramid valleys. Here, we show that this issue may be resolved by selecting a silicon substrate morphology featuring large pyramids. Chemical post-texturization treatments can further reduce the surface recombination velocity. This sequence has allowed us to fabricate solar cells with open circuit voltage over 700 mV, demonstrating also on device level the effect of pyramid density and surface micro-roughness on the surface passivation quality.

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Fesquet L, Olibet S, Damon-Lacoste J, De Wolf S, Hessler-Wyser A, Monachon C et al. Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700 mV. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 754-758. 5411173. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2009.5411173

Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700 mV

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