Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices

Juan B. Roldan; David Maldonadoep; C. Aguilera-Pedregosa; Francisco J. Alonso; Yiping Xiao; Yaqing Shen; Wenwen Zheng; Mario Lanza

doi:10.1109/TED.2022.3197677

Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices

Juan B. Roldan, David Maldonadoep, C. Aguilera-Pedregosa, Francisco J. Alonso, Yiping Xiao, Yaqing Shen, Wenwen Zheng, Mario Lanza

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The variability of memristive devices using multilayer hexagonal boron nitride (h-BN) coupled with Ti and Au electrodes (i.e., Au/Ti/h-BN/Au) is analyzed in depth using different numerical techniques. We extract the reset voltage using three different methods, quantify its cycle-to-cycle variability, calculate the charge and flux that allows to minimize the effects of electric noise and the inherent stochasticity of resistive switching, describe the device variability using time series analyses to assess the “memory” effect, and employ a circuit breaker simulator to understand the formation and rupture of the percolation paths that produce the switching. We conclude that the cycle-to-cycle variability of the Au/Ti/h-BN/Au devices presented here is higher than that previously observed in Au/h-BN/Au devices, and hence, they may be useful for data encryption.

Original language	English (US)
Pages (from-to)	1-0
Journal	IEEE Transactions on Electron Devices
DOIs	https://doi.org/10.1109/TED.2022.3197677
State	Published - Aug 30 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-09-14
Acknowledgements: This work was supported in part by the Ministry of Science and Technology of China under Grant 2019YFE0124200 and Grant 2018YFE0100800; in part by the National Natural Science Foundation of China under Grant 61874075; in part by the Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain), and European Regional Development Fund (ERDF) under Project A-TIC-117-UGR18, Project A-FQM-66-UGR20, Project A-FQM345-UGR18, Project B-TIC-624-UGR20, and Project IE2017-5414; in part by the Ministerio de Ciencia Innovación y Universidades/Agencia Estatal de Investigación/Fondo Europeo de Desarrollo Regional (MCIU/AEI/FEDER) under Grant PGC2018-098860-B-I00; in part by the “Maria de Maeztu” Excellence Unit IMAG, under Reference CEX2020- 001105-M; and in part by MCIN/AEI/10.13039/501100011033/. The work of Mario Lanza was supported by the King Abdullah University of Science and Technology.

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https://repository.kaust.edu.sa/bitstream/10754/680847/1/Modeling_the_Variability_of_Au_Ti_h-BN_Au_Memristive_Devices.pdf

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title = "Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices",

abstract = "The variability of memristive devices using multilayer hexagonal boron nitride (h-BN) coupled with Ti and Au electrodes (i.e., Au/Ti/h-BN/Au) is analyzed in depth using different numerical techniques. We extract the reset voltage using three different methods, quantify its cycle-to-cycle variability, calculate the charge and flux that allows to minimize the effects of electric noise and the inherent stochasticity of resistive switching, describe the device variability using time series analyses to assess the “memory” effect, and employ a circuit breaker simulator to understand the formation and rupture of the percolation paths that produce the switching. We conclude that the cycle-to-cycle variability of the Au/Ti/h-BN/Au devices presented here is higher than that previously observed in Au/h-BN/Au devices, and hence, they may be useful for data encryption.",

author = "Roldan, {Juan B.} and David Maldonadoep and C. Aguilera-Pedregosa and Alonso, {Francisco J.} and Yiping Xiao and Yaqing Shen and Wenwen Zheng and Mario Lanza",

note = "KAUST Repository Item: Exported on 2022-09-14 Acknowledgements: This work was supported in part by the Ministry of Science and Technology of China under Grant 2019YFE0124200 and Grant 2018YFE0100800; in part by the National Natural Science Foundation of China under Grant 61874075; in part by the Consejer{\'i}a de Conocimiento, Investigaci{\'o}n y Universidad, Junta de Andaluc{\'i}a (Spain), and European Regional Development Fund (ERDF) under Project A-TIC-117-UGR18, Project A-FQM-66-UGR20, Project A-FQM345-UGR18, Project B-TIC-624-UGR20, and Project IE2017-5414; in part by the Ministerio de Ciencia Innovaci{\'o}n y Universidades/Agencia Estatal de Investigaci{\'o}n/Fondo Europeo de Desarrollo Regional (MCIU/AEI/FEDER) under Grant PGC2018-098860-B-I00; in part by the “Maria de Maeztu” Excellence Unit IMAG, under Reference CEX2020- 001105-M; and in part by MCIN/AEI/10.13039/501100011033/. The work of Mario Lanza was supported by the King Abdullah University of Science and Technology.",

year = "2022",

month = aug,

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doi = "10.1109/TED.2022.3197677",

language = "English (US)",

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journal = "IEEE Transactions on Electron Devices",

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AU - Roldan, Juan B.

AU - Maldonadoep, David

AU - Aguilera-Pedregosa, C.

AU - Alonso, Francisco J.

AU - Xiao, Yiping

AU - Shen, Yaqing

AU - Zheng, Wenwen

AU - Lanza, Mario

N1 - KAUST Repository Item: Exported on 2022-09-14 Acknowledgements: This work was supported in part by the Ministry of Science and Technology of China under Grant 2019YFE0124200 and Grant 2018YFE0100800; in part by the National Natural Science Foundation of China under Grant 61874075; in part by the Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain), and European Regional Development Fund (ERDF) under Project A-TIC-117-UGR18, Project A-FQM-66-UGR20, Project A-FQM345-UGR18, Project B-TIC-624-UGR20, and Project IE2017-5414; in part by the Ministerio de Ciencia Innovación y Universidades/Agencia Estatal de Investigación/Fondo Europeo de Desarrollo Regional (MCIU/AEI/FEDER) under Grant PGC2018-098860-B-I00; in part by the “Maria de Maeztu” Excellence Unit IMAG, under Reference CEX2020- 001105-M; and in part by MCIN/AEI/10.13039/501100011033/. The work of Mario Lanza was supported by the King Abdullah University of Science and Technology.

PY - 2022/8/30

Y1 - 2022/8/30

N2 - The variability of memristive devices using multilayer hexagonal boron nitride (h-BN) coupled with Ti and Au electrodes (i.e., Au/Ti/h-BN/Au) is analyzed in depth using different numerical techniques. We extract the reset voltage using three different methods, quantify its cycle-to-cycle variability, calculate the charge and flux that allows to minimize the effects of electric noise and the inherent stochasticity of resistive switching, describe the device variability using time series analyses to assess the “memory” effect, and employ a circuit breaker simulator to understand the formation and rupture of the percolation paths that produce the switching. We conclude that the cycle-to-cycle variability of the Au/Ti/h-BN/Au devices presented here is higher than that previously observed in Au/h-BN/Au devices, and hence, they may be useful for data encryption.

AB - The variability of memristive devices using multilayer hexagonal boron nitride (h-BN) coupled with Ti and Au electrodes (i.e., Au/Ti/h-BN/Au) is analyzed in depth using different numerical techniques. We extract the reset voltage using three different methods, quantify its cycle-to-cycle variability, calculate the charge and flux that allows to minimize the effects of electric noise and the inherent stochasticity of resistive switching, describe the device variability using time series analyses to assess the “memory” effect, and employ a circuit breaker simulator to understand the formation and rupture of the percolation paths that produce the switching. We conclude that the cycle-to-cycle variability of the Au/Ti/h-BN/Au devices presented here is higher than that previously observed in Au/h-BN/Au devices, and hence, they may be useful for data encryption.

UR - http://hdl.handle.net/10754/680847

UR - https://ieeexplore.ieee.org/document/9870171/

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DO - 10.1109/TED.2022.3197677

M3 - Article

SN - 1557-9646

SP - 1

EP - 0

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -

Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices

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