Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices

Juan B. Roldan, David Maldonadoep, C. Aguilera-Pedregosa, Francisco J. Alonso, Yiping Xiao, Yaqing Shen, Wenwen Zheng, Mario Lanza

Research output: Contribution to journalArticlepeer-review

Abstract

The variability of memristive devices using multilayer hexagonal boron nitride (h-BN) coupled with Ti and Au electrodes (i.e., Au/Ti/h-BN/Au) is analyzed in depth using different numerical techniques. We extract the reset voltage using three different methods, quantify its cycle-to-cycle variability, calculate the charge and flux that allows to minimize the effects of electric noise and the inherent stochasticity of resistive switching, describe the device variability using time series analyses to assess the “memory” effect, and employ a circuit breaker simulator to understand the formation and rupture of the percolation paths that produce the switching. We conclude that the cycle-to-cycle variability of the Au/Ti/h-BN/Au devices presented here is higher than that previously observed in Au/h-BN/Au devices, and hence, they may be useful for data encryption.
Original languageEnglish (US)
Pages (from-to)1-0
JournalIEEE Transactions on Electron Devices
DOIs
StatePublished - Aug 30 2022

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