Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

S. R. Sarath Kumar, Anas I. Abutaha, Mohamed N. Hedhili, Husam N. Alshareef

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The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.
Original languageEnglish (US)
Pages (from-to)052110
JournalApplied Physics Letters
Issue number5
StatePublished - Feb 1 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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