Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

S. R. Sarath Kumar; Anas I. Abutaha; Mohamed N. Hedhili; Husam N. Alshareef

doi:10.1063/1.3678186

Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

S. R. Sarath Kumar, Anas I. Abutaha, Mohamed N. Hedhili, Husam N. Alshareef

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

Original language	English (US)
Pages (from-to)	052110
Journal	Applied Physics Letters
Volume	100
Issue number	5
DOIs	https://doi.org/10.1063/1.3678186
State	Published - Feb 1 2012

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3678186

https://repository.kaust.edu.sa/bitstream/10754/552733/1/1.3678186.pdf

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title = "Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry",

abstract = "The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.",

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T1 - Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

AU - Sarath Kumar, S. R.

AU - Abutaha, Anas I.

AU - Hedhili, Mohamed N.

AU - Alshareef, Husam N.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2012/2/1

Y1 - 2012/2/1

N2 - The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

AB - The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

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M3 - Article

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VL - 100

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

Abstract

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