Modeling of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy using TMGa/NH3/H2 system: A computational fluid dynamics simulation study

Akira Hirako; Kazuhide Kusakabe; Kazuhiro Ohkawa

doi:10.1143/JJAP.44.874

Modeling of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy using TMGa/NH₃/H₂ system: A computational fluid dynamics simulation study

Akira Hirako^*, Kazuhide Kusakabe, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

A model of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy was studied by computational fluid dynamics simulations. We included the formation of polymers such as [Ga-N]_n and [MMGaNH]_n (n = 2-6) in the reaction model in a TMGa/NH₃/H₂ system for the first time. The simulations using this reaction modeling successfully explained experimental growth rates at various temperatures, and clarified the main reaction pathway of GaN growth. The change in gas-phase chemistry due to temperature in the range of 300-1400 K was investigated. It was found that the type of reactive molecule changes with temperature, followed by the formation of different polymers in a certain temperature range, that is, [MMGaNH] _N at 600-750 K and [Ga-N]_n at higher temperatures.

Original language	English (US)
Pages (from-to)	874-879
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	2
DOIs	https://doi.org/10.1143/JJAP.44.874
State	Published - Feb 2005
Externally published	Yes

Keywords

Computer simulation
MOVPE
Nitrides
Polymer formation
Reaction pathway

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.44.874

Cite this

@article{e1446f4fbeb9447dad4acc69c7c141d3,

title = "Modeling of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy using TMGa/NH3/H2 system: A computational fluid dynamics simulation study",

abstract = "A model of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy was studied by computational fluid dynamics simulations. We included the formation of polymers such as [Ga-N]n and [MMGaNH]n (n = 2-6) in the reaction model in a TMGa/NH3/H2 system for the first time. The simulations using this reaction modeling successfully explained experimental growth rates at various temperatures, and clarified the main reaction pathway of GaN growth. The change in gas-phase chemistry due to temperature in the range of 300-1400 K was investigated. It was found that the type of reactive molecule changes with temperature, followed by the formation of different polymers in a certain temperature range, that is, [MMGaNH] N at 600-750 K and [Ga-N]n at higher temperatures.",

keywords = "Computer simulation, MOVPE, Nitrides, Polymer formation, Reaction pathway",

author = "Akira Hirako and Kazuhide Kusakabe and Kazuhiro Ohkawa",

year = "2005",

month = feb,

doi = "10.1143/JJAP.44.874",

language = "English (US)",

volume = "44",

pages = "874--879",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "2",

}

Modeling of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy using TMGa/NH₃/H₂ system: A computational fluid dynamics simulation study. / Hirako, Akira; Kusakabe, Kazuhide; Ohkawa, Kazuhiro.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 2, 02.2005, p. 874-879.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Modeling of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy using TMGa/NH3/H2 system

T2 - A computational fluid dynamics simulation study

AU - Hirako, Akira

AU - Kusakabe, Kazuhide

AU - Ohkawa, Kazuhiro

PY - 2005/2

Y1 - 2005/2

N2 - A model of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy was studied by computational fluid dynamics simulations. We included the formation of polymers such as [Ga-N]n and [MMGaNH]n (n = 2-6) in the reaction model in a TMGa/NH3/H2 system for the first time. The simulations using this reaction modeling successfully explained experimental growth rates at various temperatures, and clarified the main reaction pathway of GaN growth. The change in gas-phase chemistry due to temperature in the range of 300-1400 K was investigated. It was found that the type of reactive molecule changes with temperature, followed by the formation of different polymers in a certain temperature range, that is, [MMGaNH] N at 600-750 K and [Ga-N]n at higher temperatures.

AB - A model of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy was studied by computational fluid dynamics simulations. We included the formation of polymers such as [Ga-N]n and [MMGaNH]n (n = 2-6) in the reaction model in a TMGa/NH3/H2 system for the first time. The simulations using this reaction modeling successfully explained experimental growth rates at various temperatures, and clarified the main reaction pathway of GaN growth. The change in gas-phase chemistry due to temperature in the range of 300-1400 K was investigated. It was found that the type of reactive molecule changes with temperature, followed by the formation of different polymers in a certain temperature range, that is, [MMGaNH] N at 600-750 K and [Ga-N]n at higher temperatures.

KW - Computer simulation

KW - MOVPE

KW - Nitrides

KW - Polymer formation

KW - Reaction pathway

UR - http://www.scopus.com/inward/record.url?scp=17544362083&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.874

DO - 10.1143/JJAP.44.874

M3 - Article

AN - SCOPUS:17544362083

SN - 0021-4922

VL - 44

SP - 874

EP - 879

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 2

ER -