Modeling of 3.1-10.6 GHz CMOS Filter-Based Low Noise Amplifier for Ultra-Wideband Receivers

Tamer Ragheb; Arthur Nieuwoudt; Yehia Massoud

doi:10.1109/WAMICON.2006.351903

Modeling of 3.1-10.6 GHz CMOS Filter-Based Low Noise Amplifier for Ultra-Wideband Receivers

Tamer Ragheb, Arthur Nieuwoudt, Yehia Massoud

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

36 Scopus citations

Abstract

In this paper, we present a complete modeling methodology for fully integrated filter-based ultrawideband low noise amplifiers (LNA). Our accurate analytical models capture the impact of device and passive component parasitics and transistor short channel effects to closely match circuit simulation results. Utilizing our method, we are able to accurately generate an ultrawideband LNA in the 3.1 to 10.6 GHz band that achieves a power gain greater than 10dB, input and output impedance matching less than -10dB, and a noise figure from 2:2dB to 3:3dB when using a TSMC 0:18μm mixed-signal/RF model. These performance parameters exceed the results reported from previous ultra-wideband designs. Our modeling methodology provides a new means for accurate modeling and efficient design of high performance ultrawideband amplifiers in wireless front-end RF systems. ©2006 IEEE.

Original language	English (US)
Title of host publication	IEEE Wireless and Microwave Technology Conference, WAMICON 2006
DOIs	https://doi.org/10.1109/WAMICON.2006.351903
State	Published - Dec 1 2006
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2022-09-13

Access to Document

10.1109/WAMICON.2006.351903

Cite this

@inproceedings{acadeae3bce24bcb9116fce4016be0ae,

title = "Modeling of 3.1-10.6 GHz CMOS Filter-Based Low Noise Amplifier for Ultra-Wideband Receivers",

abstract = "In this paper, we present a complete modeling methodology for fully integrated filter-based ultrawideband low noise amplifiers (LNA). Our accurate analytical models capture the impact of device and passive component parasitics and transistor short channel effects to closely match circuit simulation results. Utilizing our method, we are able to accurately generate an ultrawideband LNA in the 3.1 to 10.6 GHz band that achieves a power gain greater than 10dB, input and output impedance matching less than -10dB, and a noise figure from 2:2dB to 3:3dB when using a TSMC 0:18μm mixed-signal/RF model. These performance parameters exceed the results reported from previous ultra-wideband designs. Our modeling methodology provides a new means for accurate modeling and efficient design of high performance ultrawideband amplifiers in wireless front-end RF systems. {\textcopyright}2006 IEEE.",

author = "Tamer Ragheb and Arthur Nieuwoudt and Yehia Massoud",

note = "Generated from Scopus record by KAUST IRTS on 2022-09-13",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/WAMICON.2006.351903",

language = "English (US)",

isbn = "1424408482",

booktitle = "IEEE Wireless and Microwave Technology Conference, WAMICON 2006",

}

TY - GEN

T1 - Modeling of 3.1-10.6 GHz CMOS Filter-Based Low Noise Amplifier for Ultra-Wideband Receivers

AU - Ragheb, Tamer

AU - Nieuwoudt, Arthur

AU - Massoud, Yehia

N1 - Generated from Scopus record by KAUST IRTS on 2022-09-13

PY - 2006/12/1

Y1 - 2006/12/1

N2 - In this paper, we present a complete modeling methodology for fully integrated filter-based ultrawideband low noise amplifiers (LNA). Our accurate analytical models capture the impact of device and passive component parasitics and transistor short channel effects to closely match circuit simulation results. Utilizing our method, we are able to accurately generate an ultrawideband LNA in the 3.1 to 10.6 GHz band that achieves a power gain greater than 10dB, input and output impedance matching less than -10dB, and a noise figure from 2:2dB to 3:3dB when using a TSMC 0:18μm mixed-signal/RF model. These performance parameters exceed the results reported from previous ultra-wideband designs. Our modeling methodology provides a new means for accurate modeling and efficient design of high performance ultrawideband amplifiers in wireless front-end RF systems. ©2006 IEEE.

AB - In this paper, we present a complete modeling methodology for fully integrated filter-based ultrawideband low noise amplifiers (LNA). Our accurate analytical models capture the impact of device and passive component parasitics and transistor short channel effects to closely match circuit simulation results. Utilizing our method, we are able to accurately generate an ultrawideband LNA in the 3.1 to 10.6 GHz band that achieves a power gain greater than 10dB, input and output impedance matching less than -10dB, and a noise figure from 2:2dB to 3:3dB when using a TSMC 0:18μm mixed-signal/RF model. These performance parameters exceed the results reported from previous ultra-wideband designs. Our modeling methodology provides a new means for accurate modeling and efficient design of high performance ultrawideband amplifiers in wireless front-end RF systems. ©2006 IEEE.

UR - https://ieeexplore.ieee.org/document/4161065/

UR - http://www.scopus.com/inward/record.url?scp=48749089766&partnerID=8YFLogxK

U2 - 10.1109/WAMICON.2006.351903

DO - 10.1109/WAMICON.2006.351903

M3 - Conference contribution

SN - 1424408482

BT - IEEE Wireless and Microwave Technology Conference, WAMICON 2006

ER -

Modeling of 3.1-10.6 GHz CMOS Filter-Based Low Noise Amplifier for Ultra-Wideband Receivers

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this