Abstract
Rate-equation based numerical model for the analysis of two-section InAs/InP quantum-dash tunable laser is developed. The model takes into account quasi-zero dimensional density of states of dashes in the linear optical gain formulation besides incorporating both homogeneous and inhomogeneous broadening of the active region. The simulation results show a broad tunability of ~22 nm from longer 2000 µm device with 700 µm absorber length compared to 1000 µm device with 300 µm absorber length, which exhibited ~15 nm tuning window, in the L-band. Moreover, a sharp turn-on behavior is also observed, which is found to be in good agreement with our recent experimental results. Such devices and their comprehensive analysis would enable design optimization of two-section quantum-dash lasers, which are promising candidates as monolithic tunable lasers for next-generation access networks.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology |
| Publisher | SCITEPRESS - Science and Technology Publications |
| Pages | 160-164 |
| Number of pages | 5 |
| ISBN (Print) | 9789897583643 |
| DOIs | |
| State | Published - 2019 |
| Externally published | Yes |
Bibliographical note
KAUST Repository Item: Exported on 2022-06-24Acknowledgements: This work was supported by Deanship of Research, King Fahd University of Petroleum and Minerals, through grant no. IN161029. The author gratefully acknowledge contributions from Emad Alkhazraji from KFUPM and Mohd. Sharizal Alias from KAUST, for heling with the experimental results and the device fabrication, respectively.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.