MOCVD of gallium nitride nanostructures using (N3)2Ga{(CH2)3NR2}, R = Me, Et, as a single molecule precursor: Morphology control and materials characterization

Jayaprakash Khanderi, Andreas Wohlfart, Harish Parala, Anjana Devi, Julia Hambrock, Alexander Birkner, Roland A. Fischer*

*Corresponding author for this work

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