Abstract
InGaN quantum wells, grown on non-polar m-plane GaN and emitting light at 560 nm, experience lattice mismatch strain relaxation by the generation of stacking faults. Each stacking fault terminates a basal plane from the substrate side, generating misfit dislocations that have a Burgers vector with a 1/2[0001] component. The structural and optical properties of such thin film structures are reported. © 2009 The Japan Society of Applied Physics.
Original language | English (US) |
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Pages (from-to) | 0410021-0410023 |
Number of pages | 3 |
Journal | APPLIED PHYSICS EXPRESS |
Volume | 2 |
Issue number | 4 |
DOIs | |
State | Published - Apr 1 2009 |
Externally published | Yes |
Bibliographical note
Generated from Scopus record by KAUST IRTS on 2023-09-21ASJC Scopus subject areas
- General Physics and Astronomy
- General Engineering