Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN

Alec M. Fischer, Zhihao Wu, Kewei Sun, Qiyuan Wei, Yu Huang, Ryota Senda, Daisuke Iida, Motoaki Iwaya, Hiroshi Amano, Fernando A. Ponce

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

InGaN quantum wells, grown on non-polar m-plane GaN and emitting light at 560 nm, experience lattice mismatch strain relaxation by the generation of stacking faults. Each stacking fault terminates a basal plane from the substrate side, generating misfit dislocations that have a Burgers vector with a 1/2[0001] component. The structural and optical properties of such thin film structures are reported. © 2009 The Japan Society of Applied Physics.
Original languageEnglish (US)
Pages (from-to)0410021-0410023
Number of pages3
JournalAPPLIED PHYSICS EXPRESS
Volume2
Issue number4
DOIs
StatePublished - Apr 1 2009
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

  • General Physics and Astronomy
  • General Engineering

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