Misfit dislocations in In-rich InGaN/GaN quantum well structures

P. M.F.J. Costa; R. Datta; M. J. Kappers; M. E. Vickers; C. J. Humphreys; D. M. Graham; P. Dawson; M. J. Godfrey; E. J. Thrush; J. T. Mullins

doi:10.1002/pssa.200565219

Misfit dislocations in In-rich InGaN/GaN quantum well structures

P. M.F.J. Costa^*, R. Datta, M. J. Kappers, M. E. Vickers, C. J. Humphreys, D. M. Graham, P. Dawson, M. J. Godfrey, E. J. Thrush, J. T. Mullins

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

Strain relaxation has been studied for the 10-period quantum well (QW) heterostructures grown by MOVPE, In _0.16Ga _0.84N/GaN and In _0.2Ga _0.8N/GaN, both emitting with high efficiency in the blue and green regions, respectively. Additionally, a set of high-In content InGaN/GaN QW structures, where growth parameters were kept constant but QW numbers varied between 1 and 10, were also analysed by TEM, XRD and PL. For the highly-efficient green and the set of variable QW samples, TEM structural studies identified large well-width fluctuations and misfit dislocations that thread into the sample surface and are generated in the quantum well stack. This contrasts with similar observations of blue-emitting MQWs where misfit dislocations are not seen. PL measurements have been carried out for the In-rich QW series and did not reveal a greater degradation of the optical properties with increasing numbers of quantum wells in the stack.

Original language	English (US)
Pages (from-to)	1729-1732
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	203
Issue number	7
DOIs	https://doi.org/10.1002/pssa.200565219
State	Published - May 2006
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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title = "Misfit dislocations in In-rich InGaN/GaN quantum well structures",

abstract = "Strain relaxation has been studied for the 10-period quantum well (QW) heterostructures grown by MOVPE, In 0.16Ga 0.84N/GaN and In 0.2Ga 0.8N/GaN, both emitting with high efficiency in the blue and green regions, respectively. Additionally, a set of high-In content InGaN/GaN QW structures, where growth parameters were kept constant but QW numbers varied between 1 and 10, were also analysed by TEM, XRD and PL. For the highly-efficient green and the set of variable QW samples, TEM structural studies identified large well-width fluctuations and misfit dislocations that thread into the sample surface and are generated in the quantum well stack. This contrasts with similar observations of blue-emitting MQWs where misfit dislocations are not seen. PL measurements have been carried out for the In-rich QW series and did not reveal a greater degradation of the optical properties with increasing numbers of quantum wells in the stack.",

author = "Costa, {P. M.F.J.} and R. Datta and Kappers, {M. J.} and Vickers, {M. E.} and Humphreys, {C. J.} and Graham, {D. M.} and P. Dawson and Godfrey, {M. J.} and Thrush, {E. J.} and Mullins, {J. T.}",

year = "2006",

month = may,

doi = "10.1002/pssa.200565219",

language = "English (US)",

volume = "203",

pages = "1729--1732",

journal = "Physica Status Solidi (A) Applications and Materials Science",

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AU - Costa, P. M.F.J.

AU - Datta, R.

AU - Kappers, M. J.

AU - Vickers, M. E.

AU - Humphreys, C. J.

AU - Graham, D. M.

AU - Dawson, P.

AU - Godfrey, M. J.

AU - Thrush, E. J.

AU - Mullins, J. T.

PY - 2006/5

Y1 - 2006/5

N2 - Strain relaxation has been studied for the 10-period quantum well (QW) heterostructures grown by MOVPE, In 0.16Ga 0.84N/GaN and In 0.2Ga 0.8N/GaN, both emitting with high efficiency in the blue and green regions, respectively. Additionally, a set of high-In content InGaN/GaN QW structures, where growth parameters were kept constant but QW numbers varied between 1 and 10, were also analysed by TEM, XRD and PL. For the highly-efficient green and the set of variable QW samples, TEM structural studies identified large well-width fluctuations and misfit dislocations that thread into the sample surface and are generated in the quantum well stack. This contrasts with similar observations of blue-emitting MQWs where misfit dislocations are not seen. PL measurements have been carried out for the In-rich QW series and did not reveal a greater degradation of the optical properties with increasing numbers of quantum wells in the stack.

AB - Strain relaxation has been studied for the 10-period quantum well (QW) heterostructures grown by MOVPE, In 0.16Ga 0.84N/GaN and In 0.2Ga 0.8N/GaN, both emitting with high efficiency in the blue and green regions, respectively. Additionally, a set of high-In content InGaN/GaN QW structures, where growth parameters were kept constant but QW numbers varied between 1 and 10, were also analysed by TEM, XRD and PL. For the highly-efficient green and the set of variable QW samples, TEM structural studies identified large well-width fluctuations and misfit dislocations that thread into the sample surface and are generated in the quantum well stack. This contrasts with similar observations of blue-emitting MQWs where misfit dislocations are not seen. PL measurements have been carried out for the In-rich QW series and did not reveal a greater degradation of the optical properties with increasing numbers of quantum wells in the stack.

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M3 - Article

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VL - 203

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JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 7

ER -

Misfit dislocations in In-rich InGaN/GaN quantum well structures

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